2SD227晶体管资料

  • 2SD227别名:2SD227三极管、2SD227晶体管、2SD227晶体三极管

  • 2SD227生产厂家:日本松下公司

  • 2SD227制作材料:Si-NPN

  • 2SD227性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD227封装形式:直插封装

  • 2SD227极限工作电压:60V

  • 2SD227最大电流允许值:3A

  • 2SD227最大工作频率:<1MHZ或未知

  • 2SD227引脚数:2

  • 2SD227最大耗散功率:25W

  • 2SD227放大倍数

  • 2SD227图片代号:E-8

  • 2SD227vtest:60

  • 2SD227htest:999900

  • 2SD227atest:3

  • 2SD227wtest:25

  • 2SD227代换 2SD227用什么型号代替:BD241A,BD243A,BD535,BD577,BD587,BD935,3DD61C,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD227

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

2SD227

LOW FREQUNCY POWER AMPLIFIER

USHA

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1500 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Panasonic

松下

Silicon PNP epitaxial planar type Darlington

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Panasonic

松下

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) B • Complement to Type 2SB1502 APPLICATIONS • Designed for power amplification.

ISC

无锡固电

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Panasonic

松下

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B ·Complement to Type 2SB1503 APPLICATIONS ·Designe

ISC

无锡固电

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1503 ■ Features • Optimum for 110 W Hi-Fi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Panasonic

松下

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

Panasonic

松下

isc Silicon NPN Darlington Power Transistor

文件:190.22 Kbytes Page:2 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (MOTOR DRIVER, HIGH CURRENT SWITCHING APPLICATIONS)

文件:204.54 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Panasonic

松下

Power Device - Power Transistors - For Audio

Panasonic

松下

2SD227产品属性

  • 类型

    描述

  • 型号

    2SD227

  • 功能描述

    Medium Power Amplifiers and Switches

更新时间:2025-11-26 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
NA/
114
优势代理渠道,原装正品,可全系列订货开增值税票
MAT
25+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
22+
100000
代理渠道/只做原装/可含税
TOSHIBA/东芝
24+
TO92
990000
明嘉莱只做原装正品现货
PANASONIC/松下
25+
TO-220F
45000
PANASONIC/松下全新现货2SD2275即刻询购立享优惠#长期有排单订
TOSHIBA/东芝
2450+
TO-220
8850
只做原装正品假一赔十为客户做到零风险!!
TOS
18+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
KEC
24+
TO-92
9632
三年内
1983
只做原装正品
TOSHIBA
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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