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2SD227晶体管资料
2SD227别名:2SD227三极管、2SD227晶体管、2SD227晶体三极管
2SD227生产厂家:日本松下公司
2SD227制作材料:Si-NPN
2SD227性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SD227封装形式:直插封装
2SD227极限工作电压:60V
2SD227最大电流允许值:3A
2SD227最大工作频率:<1MHZ或未知
2SD227引脚数:2
2SD227最大耗散功率:25W
2SD227放大倍数:
2SD227图片代号:E-8
2SD227vtest:60
2SD227htest:999900
- 2SD227atest:3
2SD227wtest:25
2SD227代换 2SD227用什么型号代替:BD241A,BD243A,BD535,BD577,BD587,BD935,3DD61C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD227 | Medium Power Amplifiers and Switches Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
2SD227 | LOW FREQUNCY POWER AMPLIFIER | USHA | ||
Silicon NPN triple diffusion planar type Darlington(For power amplification) For power amplification Complementary to 2SB1500 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | |||
Silicon PNP epitaxial planar type Darlington Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | |||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) B • Complement to Type 2SB1502 APPLICATIONS • Designed for power amplification. | ISC 无锡固电 | |||
Silicon NPN triple diffusion planar type Darlington(For power amplification) Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | |||
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B ·Complement to Type 2SB1503 APPLICATIONS ·Designe | ISC 无锡固电 | |||
Silicon NPN triple diffusion planar type Darlington(For power amplification) For power amplification Complementary to 2SB1503 ■ Features • Optimum for 110 W Hi-Fi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) | Panasonic 松下 | |||
Silicon PNP epitaxial planar type Darlington(For power amplification) For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat): | Panasonic 松下 | |||
isc Silicon NPN Darlington Power Transistor 文件:190.22 Kbytes Page:2 Pages | ISC 无锡固电 | |||
NPN TRIPLE DIFFUSED TYPE (MOTOR DRIVER, HIGH CURRENT SWITCHING APPLICATIONS) 文件:204.54 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Silicon NPN triple diffusion planar type Darlington(For power amplification) | Panasonic 松下 | |||
Power Device - Power Transistors - For Audio | Panasonic 松下 |
2SD227产品属性
- 类型
描述
- 型号
2SD227
- 功能描述
Medium Power Amplifiers and Switches
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
114 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MAT |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
22+ |
100000 |
代理渠道/只做原装/可含税 |
|||||
TOSHIBA/东芝 |
24+ |
TO92 |
990000 |
明嘉莱只做原装正品现货 |
|||
PANASONIC/松下 |
25+ |
TO-220F |
45000 |
PANASONIC/松下全新现货2SD2275即刻询购立享优惠#长期有排单订 |
|||
TOSHIBA/东芝 |
2450+ |
TO-220 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOS |
18+ |
TO-220 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
KEC |
24+ |
TO-92 |
9632 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
TOSHIBA |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
2SD227芯片相关品牌
2SD227规格书下载地址
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2019-2-15
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