NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1= 33 mV TYP. @IC= 100 mA, IB= 10 mA VCE(sat)2= 150 mV TYP. @IC= 500 mA, IB= 20 mA • High hFEand high current

SILICON POWER TRANSISTOR

The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA • High hFE and high current

NPN Silicon Epitaxia

Features ● High hFE and high current. ● Low VCE(sat).

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) • Wide Area of Safe Operation • Complement to Type 2SB1477 APPLICATIONS • Designed for driver and general purpose applications.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ IC= 2A • Low Collector Saturation Voltage- : VCE(sat) = 2.0V(Max.) @IC= 5A • Complement to Type 2SB1478 APPLICATIONS • Designed for power linear and switching applications.

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

Transistor

isc Silicon NPN Darlington Power Transistor

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