80V/5A Switching Applications

80V/5A Switching Applications Features • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipme

Switching Applications

Features ● Surface mount type device making the following possible. ● Low collector-to-emitter saturation voltage. ● Large current capacity.

80V/7A Switching Applications

80V/7A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of 2SB1452/2SD2201-applied equipment.

High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage. • Large current capacity. • Micaless package facilitating easy mounting.

High-Current Switching Applications

Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITHCING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

Micro Motor Drive, Hammer Drive Applications

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

Micro Motor Drive, Hammer Drive Applications

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat) ● Low on resistance ron. ● High forward current transfer ratio hFE.

Silicon NPN epitaxial planer type(For low-voltage output amplification)

Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Low ON resistance Ron. ● High foward current transfer ratio hFE.

Power Transistor (160V , 1.5A)

Power Transistor

Features High breakdown voltage.(BVCEO = 160V) Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ)

Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

Medium Power Transistor (Motor, Relay drive) (60V,10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)

Silicon NPN triple diffusion planar type For power amplification ■ Features ● High collector to base voltage VCBO ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)

Silicon NPN triple diffusion planar type For power amplification ■ Features ● High collector to base voltage VCBO ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462 ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

SILICON NPN EPITAXIAL PLANAR TYPE

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462J ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

For General Amplification

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L ■ Features • High forward current transfer ratio hFE • Mold lead-less type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing.

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for low-frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers

DARLINGTON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drive

General High-Current Switching Applications

General High-Current Switching Applications Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters.

30V/8A High-Speed Switching Applications

Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters, etc.

Silicon NPN triple diffusion planar type Darlington(For low-frequency amplification)

Silicon NPN triple diffusion planar type Darlington For low-frequency amplification ■ Features ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE ● A shunt resistor is omitted f

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1470 ■Features •Optimum for 120 W Hi-Fi output •High forward current transfer ratio hFE •Low collector-emitter saturation voltage VCE(sat)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High forward current transfer ratio hFE ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

Driver Applications????

Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Driver Applications????

Driver Applications Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SB1473 ■Features ● High collector to emitter voltage VCEO of 120V. ● Optimum for low-frequency driver amplification. ● Allowing supply with the radial taping.

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

General Purpose Transistor

Features ● High DC current gain. ● High emitter-base voltage. ● Low saturation voltage.

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

DESCRIPTION The 2SD2228 is designed for general-purpose applicatons requiring High DC Current and Low Collector Saturation Voltage. This is suitable for appliances including VCR cameras and headphone stereos.

NPN Silicon Epitaxia

Features ● High dc current. ● Low collector saturation voltage.

SILICON TRANSISTOR

NPN SILICON EPTAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

SILICON POWER TRANSISTOR

The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA • High hFE and high current

NPN Silicon Epitaxia

Features ● High hFE and high current. ● Low VCE(sat).

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1= 33 mV TYP. @IC= 100 mA, IB= 10 mA VCE(sat)2= 150 mV TYP. @IC= 500 mA, IB= 20 mA • High hFEand high current

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) • Wide Area of Safe Operation • Complement to Type 2SB1477 APPLICATIONS • Designed for driver and general purpose applications.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ IC= 2A • Low Collector Saturation Voltage- : VCE(sat) = 2.0V(Max.) @IC= 5A • Complement to Type 2SB1478 APPLICATIONS • Designed for power linear and switching applications.

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise amplification ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification Complementary to 2SD2240 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through t

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise amplification ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS)

Switching Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain : hFE=2000 (Min) • Low saturation voltage • Complement to type 2SB1481 • DARLINGTON APPLICATIONS • With switching applications