isc Silicon NPN Power Transistor

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丝印代码：2SD2137；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE which Has Satisfactory Linearity Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications ● High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) ● Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA) ● Zener diode included between collector and base.

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A) • Zener diode included between collector and base. • Unclamped inductive load energy: E =

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification driver ■ Features • Low collector-emitter saturation voltage VCE(sat)

Silicon PNP epitaxial planar type

For low-frequency driver/high power amplification Complementary to 2SD2134 ■Features •Excellent current ICcharacteristics of forward current transfer ratio hFE vs. collector •High transition frequency fT •Allowing automatic insertion with radial taping

Silicon NPN epitaxial planar type

AF Dirver high power amplification\nComplementary to 2SB1414\n■ • Very good linearity of DC current gain(hFE)\n• Optimum for the dirver of 60~100W in Complementary pair with 2SB1414;

Bipolar Transistor

The UTC 2SD2136 is designed for power amplification. • High forward current transfer ratio hFE which has satisfactory linearity. \n• Low collector to emitter saturation voltage VCE(SAT). \n• Allowing supply with the radial taping.;

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：D2136；TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

Silicon PNP epitaxial planar type

For low-frequency power amplification Complementary to 2SD2136 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping.

Silicon NPN triple diffusion planar type

For power amplification Complementary to 2SB1416 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

丝印代码：D2136；TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 80 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 1.2V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications

丝印代码：D2137A；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Automatic Insertion with Radial Taping

Silicon NPN triple diffusion planar type Darlington(For power amplification)

■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing supply with the radial taping

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping

Silicon PNP epitaxial planar type Darlington(For power amplification)

Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2138 and 2SD2138A ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping

Silicon NPN triple diffusion planar type Darlington(For power amplification)

■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing supply with the radial taping

Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification)

For high-current amplification ratio, power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing supply with the radial taping

Silicon NPN Triple Diffused Type (Darlington)

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Silicon NPN Triple Diffused Type (Darlington)

文件：148.64 Kbytes Page：5 Pages

封装/外壳：3-SIP 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 50V 1A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-SIP 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 150V 1A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon NPN Power Transistor

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晶体管

POWER TRANSISTOR

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TO-126 Plastic-Encapsulate Transistors

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POWER TRANSISTOR

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POWER TRANSISTOR

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POWER TRANSISTOR

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NPN Plastic Encapsulated Transistor

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POWER TRANSISTOR

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POWER TRANSISTOR

文件：198.44 Kbytes Page：4 Pages

POWER TRANSISTOR

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POWER TRANSISTOR

文件：198.44 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：168.47 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：198.44 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：169.98 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：198.44 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：169.98 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：168.47 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：169.98 Kbytes Page：4 Pages

POWER TRANSISTOR

文件：168.47 Kbytes Page：4 Pages

Plastic-Encapsulated Transistors

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TO-220 -3L Plastic-Encapsulate Transistors

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TRANSISTOR (NPN)

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TRANSISTOR (NPN)

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TO-220-3L Plastic-Encapsulate Transistors

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