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2SD2136晶体管资料

  • 2SD2136别名:2SD2136三极管、2SD2136晶体管、2SD2136晶体三极管

  • 2SD2136生产厂家:日本松下公司

  • 2SD2136制作材料:Si-NPN

  • 2SD2136性质:低频或音频放大 (LF)_输出极 (E)_开关管 (S)

  • 2SD2136封装形式:直插封装

  • 2SD2136极限工作电压:60V

  • 2SD2136最大电流允许值:3A

  • 2SD2136最大工作频率:<1MHZ或未知

  • 2SD2136引脚数:3

  • 2SD2136最大耗散功率:1.5W

  • 2SD2136放大倍数

  • 2SD2136图片代号:A-70

  • 2SD2136vtest:60

  • 2SD2136htest:999900

  • 2SD2136atest:3

  • 2SD2136wtest:1.5

  • 2SD2136代换 2SD2136用什么型号代替:BD177,BD179,BD189,2SD794,2SD794A,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD2136

Silicon NPN triple diffusion planar type

For power amplification Complementary to 2SB1416 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

PANASONIC

松下

2SD2136

Silicon PNP epitaxial planar type

For low-frequency power amplification Complementary to 2SD2136 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping

PANASONIC

松下

2SD2136

POWER TRANSISTOR

POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping.

UTC

友顺

2SD2136

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

SECOS

喜可士

2SD2136

丝印代码:D2136;TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

DGNJDZ

南晶电子

2SD2136

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SD2136

Bipolar Transistor

The UTC 2SD2136 is designed for power amplification. • High forward current transfer ratio hFE which has satisfactory linearity. \n• Low collector to emitter saturation voltage VCE(SAT). \n• Allowing supply with the radial taping.;

UTC

友顺

2SD2136

晶体管

JSCJ

长晶科技

2SD2136

isc Silicon NPN Power Transistor

文件:272.88 Kbytes Page:2 Pages

ISC

无锡固电

2SD2136

TO-126 Plastic-Encapsulate Transistors

文件:775.11 Kbytes Page:4 Pages

JIANGSU

长电科技

2SD2136

POWER TRANSISTOR

文件:168.47 Kbytes Page:4 Pages

UTC

友顺

2SD2136

POWER TRANSISTOR

文件:169.98 Kbytes Page:4 Pages

UTC

友顺

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

SECOS

喜可士

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

SECOS

喜可士

NPN Plastic Encapsulated Transistor

FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current

SECOS

喜可士

丝印代码:D2136;TO-126 Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

DGNJDZ

南晶电子

POWER TRANSISTOR

文件:168.47 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:169.98 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:198.44 Kbytes Page:4 Pages

UTC

友顺

NPN Plastic Encapsulated Transistor

文件:258.62 Kbytes Page:2 Pages

SECOS

喜可士

封装/外壳:3-SIP 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 60V 3A MT-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

封装/外壳:3-SIP 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 60V 3A MT-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

POWER TRANSISTOR

文件:198.44 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:169.98 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:198.44 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:168.47 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:169.98 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:198.44 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:198.44 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:169.98 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:168.47 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:169.98 Kbytes Page:4 Pages

UTC

友顺

POWER TRANSISTOR

文件:168.47 Kbytes Page:4 Pages

UTC

友顺

2SD2136产品属性

  • 类型

    描述

  • PCM(W):

    1.25

  • IC(A):

    3

  • VCBO(V):

    60

  • VCEO(V):

    60

  • VEBO(V):

    6

  • hFEMin:

    40

  • hFEMax:

    250

  • hFE@VCE(V):

    4

  • hFE@IC(A):

    1

  • VCE(sat)(V):

    1.2

  • VCE(sat)\u001E@IC(A):

    3

  • VCE(sat)\u001E@IB(A):

    0.375

  • Package:

    TO-126

更新时间:2026-7-22 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC
23+
NA
20000
全新原装假一赔十
MATSUSHITA
24+/25+
612
原装正品现货库存价优
CJ/长电
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
CJ/长电
21+
TO-126C
30000
百域芯优势 实单必成 可开13点增值税发票
MATSUSHITA
25+
NA
998
专做原装正品,假一罚百!
长电
25+23+
TO-126
23660
绝对原装正品全新进口深圳现货
panasonic
24+
DIP-3
306834
CJ
1051+
TO-126
2899
全新 发货1-2天
长电
22+
TO-126C
20000
公司只有原装 品质保证
PANASON
1032+
TO-126
90
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