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2SD2136晶体管资料
2SD2136别名：2SD2136三极管、2SD2136晶体管、2SD2136晶体三极管
2SD2136生产厂家：日本松下公司
2SD2136制作材料：Si-NPN
2SD2136性质：低频或音频放大 （LF）_输出极 （E）_开关管 （S）
2SD2136封装形式：直插封装
2SD2136极限工作电压：60V
2SD2136最大电流允许值：3A
2SD2136最大工作频率：<1MHZ或未知
2SD2136引脚数：3
2SD2136最大耗散功率：1.5W
2SD2136放大倍数：
2SD2136图片代号：A-70
2SD2136vtest：60
2SD2136htest：999900
- 2SD2136atest：3
2SD2136wtest：1.5
2SD2136代换 2SD2136用什么型号代替：BD177,BD179,BD189,2SD794,2SD794A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD2136 | Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1416 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping | PANASONIC 松下 |   | |
2SD2136 | Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping | PANASONIC 松下 | | |
2SD2136 | POWER TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power amplification. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE(SAT). * Allowing supply with the radial taping. | UTC 友顺 | | |
2SD2136 | NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current | SECOS 喜可士 | | |
2SD2136 | TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SD2136 | TO-126 Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping | DGNJDZ 南晶电子 | | |
2SD2136 | isc Silicon NPN Power Transistor 文件：272.88 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SD2136 | Bipolar Transistor | UTC 友顺 | | |
2SD2136 | 晶体管 | JSCJ 长晶科技 | | |
2SD2136 | TO-126 Plastic-Encapsulate Transistors 文件：775.11 Kbytes Page：4 Pages | JIANGSU 长电科技 | | |
2SD2136 | POWER TRANSISTOR 文件：169.98 Kbytes Page：4 Pages | UTC 友顺 | | |
2SD2136 | POWER TRANSISTOR 文件：168.47 Kbytes Page：4 Pages | UTC 友顺 | | |
NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current | SECOS 喜可士 | | ||
NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current | SECOS 喜可士 | | ||
NPN Plastic Encapsulated Transistor FEATURES ● Low frequency power amplifier ● Low Collector-Emitter Saturation Voltage VCE(sat) ● High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity Collector to Base Voltage VCBO 60V Collector to Emitter Voltage VCEO 60V Emitter to Base Voltage VEBO 6V Collector Current | SECOS 喜可士 | | ||
TO-126 Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE Which has Satisfactory Linearity. Low Collector-Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping | DGNJDZ 南晶电子 | | ||
POWER TRANSISTOR 文件：168.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：169.98 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：198.44 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN Plastic Encapsulated Transistor 文件：258.62 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
封装/外壳：3-SIP 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 60V 3A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PANASONIC 松下 | | ||
封装/外壳：3-SIP 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 60V 3A MT-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PANASONIC 松下 | | ||
POWER TRANSISTOR 文件：198.44 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：169.98 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：198.44 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：168.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：169.98 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：198.44 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：198.44 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：169.98 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：168.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：169.98 Kbytes Page：4 Pages | UTC 友顺 | | ||
POWER TRANSISTOR 文件：168.47 Kbytes Page：4 Pages | UTC 友顺 | |
2SD2136产品属性
- 类型
描述
- 型号
2SD2136
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
PANASONIC/松下 |
22+ |
MT-3-A1 |
100000 |
代理渠道/只做原装/可含税 |
|||
MATSUSHITA |
23+ |
NA |
998 |
专做原装正品,假一罚百! |
|||
PANASONIC |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CJ/长电 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
CJ/长电 |
21+ |
TO-126C |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
长电 |
25+23+ |
TO-126 |
23660 |
绝对原装正品全新进口深圳现货 |
|||
panasonic |
24+ |
DIP-3 |
306834 |
||||
CJ |
1051+ |
TO-126 |
2899 |
||||
长电 |
22+ |
TO-126C |
20000 |
公司只有原装 品质保证 |
2SD2136规格书下载地址
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2019-2-15
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