2SD210晶体管资料

  • 2SD2100别名:2SD2100三极管、2SD2100晶体管、2SD2100晶体三极管

  • 2SD2100生产厂家:日本三洋公司

  • 2SD2100制作材料:Si-N+R+Di

  • 2SD2100性质:表面帖装型 (SMD)_LO.SAT

  • 2SD2100封装形式:贴片封装

  • 2SD2100极限工作电压:25V

  • 2SD2100最大电流允许值:2A

  • 2SD2100最大工作频率:<1MHZ或未知

  • 2SD2100引脚数:3

  • 2SD2100最大耗散功率

  • 2SD2100放大倍数

  • 2SD2100图片代号:H-100

  • 2SD2100vtest:25

  • 2SD2100htest:999900

  • 2SD2100atest:2

  • 2SD2100wtest:0

  • 2SD2100代换 2SD2100用什么型号代替:RN5006,2SD1614,2SD1621,

型号 功能描述 生产厂家 企业 LOGO 操作

Compact Motor Driver Applications???

Features • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacity. • Small-sized package making it easy to provide high density, small-sized hybrid ICs.

SANYO

三洋

Silicon NPN Triple Diffused

Application Low frequency power amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier

ISC

无锡固电

Silicon NPN Triple Diffused

Application Low frequency power amplifier

RENESAS

瑞萨

SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER

D2102 Hitachi 2SD2102 Datasheet PDF

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application Low frequency power amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Application Low frequency power amplifier

HitachiHitachi Semiconductor

日立日立公司

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A • High DC Current Gain : hFE= 1000(Min) @ IC= 5A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS ·Design

ISC

无锡固电

Silicon NPN Epitaxial

Silicon NPN Epitaxial Application Low frequency power amplifier

RENESAS

瑞萨

Silicon NPN Epitaxial

Silicon NPN Epitaxial Application Low frequency power amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused

Applications Low frequency power amplifier

RENESAS

瑞萨

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications

ISC

无锡固电

SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER

SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER

HitachiHitachi Semiconductor

日立日立公司

NPN Transistors

文件:1.07647 Mbytes Page:3 Pages

KEXIN

科信电子

Transistors>Switching/Bipolar

RENESAS

瑞萨

Silicon NPN Power Transistors

文件:115.56 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:108.97 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:108.97 Kbytes Page:3 Pages

JMNIC

锦美电子

SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER

HitachiHitachi Semiconductor

日立日立公司

isc Silicon NPN Darlington Power Transistor

文件:190.64 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Darlington Transistor

HitachiHitachi Semiconductor

日立日立公司

isc Silicon NPN Power Transistor

文件:250.32 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Triple Diffused

文件:32.82 Kbytes Page:6 Pages

HitachiHitachi Semiconductor

日立日立公司

2SD210产品属性

  • 类型

    描述

  • 型号

    2SD210

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    Compact Motor Driver Applications

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI/日立
24+
NA/
3355
原装现货,当天可交货,原型号开票
HIT
24+
SOIC/5.2mm
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
日立
NEW
TO220
12523
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
HITACHI
23+
TO-220F
100000
专做原装正品,假一罚百!
24+
TO-3
10000
2023+
58000
进口原装,现货热卖
HITACHI/日立
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SIT
23+
TO-220
8000
只做原装现货
SIT
23+
TO-220
7000
HITACHI
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证

2SD210数据表相关新闻