Power Transistor (-50V, -3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963.

Power transistor (50V, 3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308.

Power Transistor

Features Low saturation voltage. Excellent DC current gain characteristics.

Silicon NPN epitaxial planar type(For power switching)

Silicon NPN epitaxial planar type For power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw.

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

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TRANSISTORS TO 92L TO-92LS MRT

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Low VCE(sat) Transistor

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Device - Power Transistors - General-Purpose power amplification

isc Silicon NPN Power Transistor

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