Power Transistor (-50V, -3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963.

Power transistor (50V, 3A)

Features 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308.

Power Transistor

Features Low saturation voltage. Excellent DC current gain characteristics.

Low VCE(sat) Transistor

为支持现有客户而生产的产品。不对新设计出售此产品。 Low VCE(sat)晶体管;

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 20V 3A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个