AF Power Amp Applications

Features • Suitable for sets whose heighit is restricted. • Wide ASO (adoption of MBIT process). • High reliability.

30V/8A High-Current Switching Applications

Features 1. Suitable for sets whose height is restricted 2. Low collector to emitter saturation voltage 3. Large current capacity

High-Current Switching Applications

High-Current Switching Applicatons Features • Suitable for sets whose height is restricted. • Low collector to emitter saturation voltage. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications.

High-Current Switching Applications

Features • Suitable for sets whose height is restricted. • Low collector to emitter saturation voltage. • Wide ASO and highly resistant to breakdown. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications.

High-Current Switching Applications

High-Current Switching Applications Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current sw

High-Current Switching Applications

High-Current Switching Applications Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current sw

CRT Display Horizontal Deflection Output Applications

CRT Display Horizontal Deflection Output Applications Features • Fast switching speed. • Especially suited for use in high-definition CRT display : VCC=6 to 12V. • Wide ASO and highly resistant to breakdown.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • High breakdown voltage • High speed switching • Built-in damper diode APPLICATIONS • For use in TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFM package • High breakdown voltage • High speed switching • Built-in damper diode APPLICATIONS • For use in TV horizontal output applications

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERAL DESCRIPTION High voltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

60V/3A Low-Frequency Power Amplifier Applications

60V/3A Low-Frequency Power Amplifier Applications Applications •General power amplifier. Features • Wide ASO (Adoption of MBIT process). • Low saturation voltage. • High reliability. • High breakdown voltage. • Micaless package facilitating mounting.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR DRIVER APPLICATIONS

Driver Applications Features • Darlington connection • High DC current gain Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control

丝印代码：D1918；Power Transistor (160V , 1.5A)

丝印代码：D1918；POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Epitaxial

■ Features ● High breakdown voltage. ● Low collector output capacitance. ● High transition frequency ● Complementary to 2SB1275

Power Transistor (160V , 1.5A)

Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275.

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

Silicon NPN Epitaxial

Application Low frequency power amplifier

Silicon NPN Epitaxial

- Collector to base voltage V CBO : 25 V - Collector to emitter voltage V CEO : 25 V - Emitter to base voltage V EBO : 6V

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 2000(Min) @ IC= 4A APPLICATIONS • Designed for audio frequency power amplifier and low speed switching industrial use.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) APPLICATIONS • Designed for power amplifier applications.

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification

Power Transistor (-80V, -4A)

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1342 ·High DC current gain APPLICATIONS ·Low frequency power amplification

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low voltage power supply. • Allowing supply with the radial taping

Low-Frequency General-Purpose Amp Applications???

Low-Frequency General-Purpose Amplifier Applications Features • Large current capacity. • Low collector to emitter saturation voltage. • Very small-sized package permitting sets to be made smaller and slimer. Applications • AF power amplifier, medium-speed switching, small-sized mo

NPN Epitaxial Planar Silicon Transistors

Features ● Large current capacity. ● Low collector to emitter saturation voltage. ● Very small-sized package permitting sets to be made smaller and slimer.

AF Amp Applications

AF Amplifier Applications Features • Large current capacity. • Low collector to emitter saturation voltage. • Wide ASO. Applications • AF power amplifier, medium-speed switching, small-sized motor drivers

Silicon NPN epitaxial planar type

For low-voltage output amplification For muting For DC-DC converter ■ Features • Low ON resistance Ron • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

Silicon NPN epitaxial planar type

For low-voltage output amplification For muting For DC-DC converter ■ Features • Low ON resistance Ron • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The 2SD1939 is a darlington transistor including a dumper diode at E-C. It is suitable for general driving use, such as hammer, solenoid, lamp or motor.

High-Voltage Switching, AF25 to 30W Output Applications

85V/6A, AF 25 to 30W Output Applications Features • Micaless package facilitating mounting. • Wide ASO.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Wide area of safe operation APPLICATIONS • 85V/6A, AF 25 to 30W output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Wide area of safe operation APPLICATIONS • 85V/6A, AF 25 to 30W output applications

Silicon NPN Power Transistors

DESCRIPTION With TO-3PFM package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

High-current gain Power Transistor (-60V, -3A)

2SB1639 ( -60V, -3A) 2SD2318, 2SD1944 (60V, 3A) High DC current gain.

丝印代码：YQ；Medium Power Transistor (50V, 0.5A)

Features 1) High current.(IC=0.5A) 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

Medium Power Transistor

Features ◾ High current.(IC=5A) ◾ Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.

NPN Silicon General Purpose Transistor

FEATURES * High current.(IC=5A) * Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA

NPN Silicon Epitaxia

Features ● High dc current gain and good hFE. ● Low collector saturation voltage. ● High VEBO.

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. FEATURES ● High DC Current Gain and Good hFE linearity. hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A) ● Low Collector Saturation Voltage.

Driver Applications??????

NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications Features · Darlington connection. · High DC current gain. · Low dependence of DC current gain on temperature. Applications · Motor drivers, printer hammer drivers, relay drivers.

Power Transistor (120V, 7A)

2SD1957 Power Transistor (120V, 7A) 2SD2061 Power Transistor (60V, 3A)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • TV horizontal deflection output • High-current switching applications

TV Horizontal Deflection Output, High-Power Switching Applications

TV Horizontal Deflection Output High-Current Switching Applications Features · Excellent tf permitting efficient drive with less internal dissipation.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • TV horizontal deflection output • High-current switching applications