2SD186晶体管资料

  • 2SD186别名:2SD186三极管、2SD186晶体管、2SD186晶体三极管

  • 2SD186生产厂家:日本三洋公司

  • 2SD186制作材料:Ge-NPN

  • 2SD186性质:低频或音频放大 (LF)

  • 2SD186封装形式:直插封装

  • 2SD186极限工作电压:25V

  • 2SD186最大电流允许值:0.15A

  • 2SD186最大工作频率:<1MHZ或未知

  • 2SD186引脚数:3

  • 2SD186最大耗散功率:0.2W

  • 2SD186放大倍数

  • 2SD186图片代号:C-47

  • 2SD186vtest:25

  • 2SD186htest:999900

  • 2SD186atest:0.15

  • 2SD186wtest:0.2

  • 2SD186代换 2SD186用什么型号代替:AC127,AC176,AC187,2N1302,2SD30,2SD72,3BX81B,

型号 功能描述 生产厂家 企业 LOGO 操作
2SD186

2SD186

文件:25.15 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SD186

2SD186

ETC

知名厂家

Power transistor (40V, 2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB1183 / 2SB1239.

ROHM

罗姆

Epitaxial Planar NPN Silicon Darlington Transistors

[ROHM] Features 1) Darlington connection provises high DC current gain (hFE). 2) Built-in resistance of approx. 4kΩ between its base and emitter. Excellent temprature stability.

ETCList of Unclassifed Manufacturers

未分类制造商

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

ROHM

罗姆

Medium Power Transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

Medium power transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

ROHM

罗姆

Power Transistor 50V, 3A

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. Structure Epitaxial planar type NPN silicon transistor

ROHM

罗姆

Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

ROHM

罗姆

Medium Power Transistor (Motor, Relay drive) (60??0V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

Littelfuse

力特

Medium Power Transistor (Motor, Relay drive) (60??0V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

RENESAS

瑞萨

Power Transistor (100V, 2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

ROHM

罗姆

Power Transistor (100V , 2A)

Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316.

ROHM

罗姆

Transistors

Power Transistor (+/- 100V/ +/- 2A)

ROHM

罗姆

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

RENESAS

瑞萨

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

RENESAS

瑞萨

Medium power transistor (32V, 2A)

文件:157.31 Kbytes Page:3 Pages

ROHM

罗姆

Silicon NPN transistor in a TO-92LM Plastic Package

文件:839.22 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

Medium power transistor (32V, 2A)

文件:176.4 Kbytes Page:4 Pages

ROHM

罗姆

功率三极管

STMICROELECTRONICS

意法半导体

TRANS NPN 32V 2A ATV

ROHM

罗姆

封装/外壳:3-SIP 包装:散装 描述:TRANS NPN 32V 2A ATV 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

封装/外壳:3-SIP 包装:散装 描述:TRANS NPN 32V 2A ATV 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

Power Transistor (80V, 1A)

文件:177.89 Kbytes Page:4 Pages

ROHM

罗姆

Power Transistor (80V, 1A)

文件:120.9 Kbytes Page:4 Pages

ROHM

罗姆

Power Transistor (80V, 1A)

文件:96.42 Kbytes Page:5 Pages

ROHM

罗姆

Power Transistor (50V, 3A)

文件:176.72 Kbytes Page:4 Pages

ROHM

罗姆

Silicon NPN transistor in a TO-92LM Plastic Package

文件:953.41 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

Medium Power Transistor (Motor, Relay drive) (60짹10V, 2A)

文件:171.97 Kbytes Page:4 Pages

ROHM

罗姆

2SD186产品属性

  • 类型

    描述

  • 型号

    2SD186

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR ATV50V .5A .6W ECB

更新时间:2025-11-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
NA/
8250
原装现货,当天可交货,原型号开票
ROHM
2016+
TO-92L
3000
只做原装,假一罚十,公司可开17%增值税发票!
ROHM
23+
TO92
20000
全新原装假一赔十
ROHM
13+
TO92
4300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ROHM
TO92
2550
全新原装进口自己库存优势
SANYO
23+
TO-126
60000
专做原装正品,假一罚百!
2SD1864
25+
699
699
ROHM/罗姆
25+
TO-92
9800
全新原装现货,假一赔十
ROHM/罗姆
25+
TO92
880000
明嘉莱只做原装正品现货
ROHM
25+23+
ATV-3
49168
绝对原装正品现货,全新深圳原装进口现货

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