Power Transistor 50V, 3A

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Good Linearity of hFE APPLICATIONS ·Power dissipation

Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Good Linearity of hFE APPLICATIONS ·Power dissipation

Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Good Linearity of hFE APPLICATIONS ·Power dissipation

Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Good Linearity of hFE APPLICATIONS ·Power dissipation

Epitaxial Planar PNP Silicon Transistors

Low collector saturation voltage: Voeea=-0.5V (Typj (lc/lB 一 一 2A/ 一 0.2AJ Complementary pair with 2SD1760F5.

Epitaxial planar type NPN silicon transistor

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR

Low Feq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Features 1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A 2) Excellent current characteristics of DC current gain. 3) Large collector power dissipation: PC=30W(TC=25℃) 4) Complementary pair with 2SB1187

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Low Collector Saturation Voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A • Excellent Current Characteristics of DC Current Gain. • Large Collector Power Dissipation: PC=30W(TC=25℃) • Complementary Pair with 2SB1187

Epitaxial Planar PNP Silicon Transistor

@ Features 1) Large collector power dissipation: Po=30W (Te=25°C) 2) Wide ASO. 3) Complementary pair with 25D1761. 4) Easily insulated from the heat dis- sipation plate as the fin is molded.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SB1187 • Wide safe operating area APPLICATIONS • For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SB1187 • Wide safe operating area APPLICATIONS • For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1185 APPLICATIONS ·For low frequency power amplifier applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Power Transistor (50V, 3A)

Power Transistor (50V, 3A) Features 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC/IB = 2A/0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185.
Structure Epitaxial planar type NPN silicon transistor

TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complements the 2SB1185

Power Transistor

Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High breakdown voltage VCEO ·Complement to type 2SB1186 ·High transition frequency APPLICATIONS ·For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High breakdown voltage VCEO ·Complement to type 2SB1186 ·High transition frequency APPLICATIONS ·For low frequency power amplifier applications

POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

EPITAXIAL PLANAR NPN SILICON DARLINGTON TRANSISTOR

Features 1) Damper diode is incorporation. 2) Built-in resistance between base and emitter. 3) Full-mold convered fin enables easy insulation from heat sink.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON • High DC current gain APPLICATIONS • For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON • High DC current gain APPLICATIONS • For low frequency power amplifier applications

TRANSISTOR (NPN)

FEATURES ● Low VCE(s

Medium Power Transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

SOT-89 Plastic-Encapsulate Transistors

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage:VCE(sat)=0.5V(Typ.) ● PC=0.5W(Mounted on ceramic substrate) ● Small flat package. ● Complementary pair with 2SB1188. APPLICATIONS ● Power amplifier application.

Plastic-Encapsulate Transistors

FEATURES • Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) • Complements to 2SB1188

Medium power transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor

Features • Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

Medium Power Transistor

Features ● Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB = 0.2A).

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Silicon Epitaxial Planar Transistor

FEATURES Low saturation voltage:VCE(sat)=0.5V(Typ.) PC=0.5W(Mounted on ceramic substrate) Small flat package. Complementary pair with 2SB1188. APPLICATIONS Power amplifier application.

2A, 40V NPN Epitaxial Planar Transistor

DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

Medium Power Transistor

Features • Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Complements to 2SB1188 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information)

2A, 40V NPN Epitaxial Planar Transistor

DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

Medium Power Transistor

Features • Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

2A, 40V NPN Epitaxial Planar Transistor

DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Complements to 2SB1188 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information)

Medium Power Transistor

Features • Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

2A, 40V NPN Epitaxial Planar Transistor

DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Complements to 2SB1188 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information)

Medium power transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Complement the 2SB1189

Medium power transistor

FEATURES ● High breakdown voltage and high current. ● Complementary pair with 2SB1189.

Medium Power Transistor

Features ● High breakdown voltage, BVCEO=80V, and high current, IC=0.7A.

Medium power transistor (80V, 0.7A)

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

MEDIUM POWER TRANSISTOR(-80V, -0.7A)

[ROHM] Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

0.7A , 80V NPN Plastic Encapsulated Transistor

FEATURES • High Breakdown Voltage and Current • Excellent DC Current Gain Linearity • Complementary to 2SB1189

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High Breakdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1189

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.