丝印代码：DB；Medium Power Transistor

Features • Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

GENERAL PURPOSE TRANSISTOR NPN MEDIUM POWER TRANSISTOR

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晶体三极管

Medium Power Transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

TRANSISTOR (NPN)

FEATURES ● Low VCE(s

Medium Power Transistor

Features ● Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB = 0.2A).

Medium power transistor (32V, 2A)

文件：176.4 Kbytes Page：4 Pages