Epitaxial Planar PNP Silicon Transistor

@ Features 1) Large collector power dissipation: Po=30W (Te=25°C) 2) Wide ASO. 3) Complementary pair with 25D1761. 4) Easily insulated from the heat dis- sipation plate as the fin is molded.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SB1187 • Wide safe operating area APPLICATIONS • For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SB1187 • Wide safe operating area APPLICATIONS • For low frequency power amplifier applications

TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR

Low Feq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Features 1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A 2) Excellent current characteristics of DC current gain. 3) Large collector power dissipation: PC=30W(TC=25℃) 4) Complementary pair with 2SB1187

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Low Collector Saturation Voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A • Excellent Current Characteristics of DC Current Gain. • Large Collector Power Dissipation: PC=30W(TC=25℃) • Complementary Pair with 2SB1187

Silicon NPN Power Transistors

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TRANSISTOR (NPN)

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晶体管