NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1700 is NPN silicon epitaxial darlington transistor designed for pulse motor driver, printer driver, solenoid driver. FEATURES ● High DC Current Gain ● Zener Diode between Collector and Base for Absorbing Surge Voltage is Built-in. ● Reverse Diode between Collector and Emit

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1701 is NPN silicon epitaxial darlington transistor designed for pulse motor driver, printer driver, solenoid driver. FEATURES ● High DC Current gain. ● Zener Diode between Collector and Base for Absorbing Surge Voltage is built-in. ● Reverse Diode between Collector and

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1702 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver.

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1702 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver.

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1154 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A • Complement to Type 2SB1154 APPLICATIONS • Designed for power switching applications

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max.)@ IC= 7A ·Complement to Type 2SB1155 APPLICATIONS ·Designed for power switching applications

SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING

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Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1156 ■Features •Low collector-emitter saturation voltage VCE(sat) •Satisfactory linearity of forward current transfer ratio hFE •Large collector current IC •Full-pack package which can be installed to the heat sink with one screw

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 APPLICATIONS ·Designed for power switching applications

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • Built-in Damper Diode APPLICATIONS • Color TV horizontal deflection output • Color display horizontal deflection output

Transistor-Bipolar Power Transistors

Small Signal Bipolar Transistors

Silicon NPN epitaxial planar type Power Transistors

封装/外壳：TOP-3F 包装：散装 描述：TRANS NPN 80V 10A TOP-3F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TOP-3F 包装：散装 描述：TRANS NPN 80V 20A TOP-3F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个