Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1154 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A • Complement to Type 2SB1154 APPLICATIONS • Designed for power switching applications

Silicon NPN epitaxial planar type Power Transistors

For power switching\nComplementary to 2SB1154\n\n■ • Low collector-emitter saturation voltage VCE(sat)\n• Large collector current IC\n• Full-pack package which can be installed to the heat sink with one screw;

封装/外壳：TOP-3F 包装：散装 描述：TRANS NPN 80V 10A TOP-3F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个