NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1700 is NPN silicon epitaxial darlington transistor designed for pulse motor driver, printer driver, solenoid driver. FEATURES ● High DC Current Gain ● Zener Diode between Collector and Base for Absorbing Surge Voltage is Built-in. ● Reverse Diode between Collector and Emit

NPN SILICON TRANSISTOR

DESCRIPTION The 2SD1701 is NPN silicon epitaxial darlington transistor designed for pulse motor driver, printer driver, solenoid driver. FEATURES ● High DC Current gain. ● Zener Diode between Collector and Base for Absorbing Surge Voltage is built-in. ● Reverse Diode between Collector and

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1702 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver.

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1702 is NPN silicon epitaxial darlington transistor designed for pulse motor, printer driver, solenoid driver.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 6A • Complement to Type 2SB1154 APPLICATIONS • Designed for power switching applications

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1154 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max.)@ IC= 7A ·Complement to Type 2SB1155 APPLICATIONS ·Designed for power switching applications

SILICON NPN EPITAXIAL PLANAR TYPE POWER SWITCHING

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 APPLICATIONS ·Designed for power switching applications

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1156 ■Features •Low collector-emitter saturation voltage VCE(sat) •Satisfactory linearity of forward current transfer ratio hFE •Large collector current IC •Full-pack package which can be installed to the heat sink with one screw

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • Built-in Damper Diode APPLICATIONS • Color TV horizontal deflection output • Color display horizontal deflection output

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage;high speed • High reliability. APPLICATIONS • Ultrahigh-definition CRT display • Horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage;high speed • High reliability. APPLICATIONS • Ultrahigh-definition CRT display • Horizontal deflection output applications

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers

NPN Triple Diffused Planar Silicon Transistor 500V / 7A Switching Regulator Applications

500V / 7A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating mounting.

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) ● High Collector-Base Voltage(VCBO=1500V) ● High Speed Switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SB1157 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SB1157 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1158 APPLICATIONS • Designed for high power amplifier applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1159 APPLICATIONS • Designed for high power amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SB1160 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SB1160 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1161 APPLICATIONS • Designed for high power amplifier applications.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SB1163 • Excellent linearity of hFE • Wide area of safe operation (ASO) • High transition frequency fT APPLICATIONS • For high power amplifier applications

SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER

Si NPN Triple Diffused Plabar High Power Amplifier Commplementary Pair with 2SB1163

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SB1163 • Excellent linearity of hFE • Wide area of safe operation (ASO) • High transition frequency fT APPLICATIONS • For high power amplifier applications

Silicon NPN Triple Diffusion Planar Type

Features ● High forward current transfer ratio hFE which has satisfactory linearity ● High emitter-base voltage (Collector open) VEBO

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE which has satisfactory lin earity • High emitter-base voltage (Collector open) VEBO • N type package enabling direct soldering of the

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current:: IC= 5A • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A • Wide Area of Safe Operation • Complement to Type 2SB1291 APPLICATIONS • Designed for low frequency power amplifier applications.

50V/5A Switching Applications

50V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time.

50V/8A Switching Applications

50V/8A Switching Applications Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switchint time. Applications · Relay drivers, high-speed inverters, converters.

100V/3A Switching Applications

Features 1. Low collector-to-emitter saturation voltage 2. High f T 3. Excellent linearity of h FE 4. Fast switching time

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 100 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 0.4V(Max.)@ IC= 1.5A ·Complement to the PNP 2SB1167 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high v

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC=1A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

100V/4A Switching Applications

Large Current Switching Applications Features · Relay drivers, high-speed inverters, converters. · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Built-in damper diode • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Built-in damper diode • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT

Silicon PNP Triple-Diffused Planar Type Horizontal Deflection Output ■ Features ● Damper diode built-in ● Minimizes external component counts and simplifies circuitry ● High breakdown voltage, high reliability ● High speed switching ● Wide area of safety operation (ASO)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Built-in damper diode • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Built-in damper diode • High voltage ,high speed • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT

isc Silicon NPN Power Transistor

DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Built-in damper diode • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT

Silicon PNP Triple-Diffusion Planar Type Horizontal Deflection Output Features • Damper diode built-in • Minimizes external component counts and simplifies circuitry • High breakdown voltage, high reliability • High speed switching • Wide area of safety operation (ASO)

SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HORIZONTAL DEFLECTION OUTPUT

Silicon PNP Triple-Diffused Planar Type Horizontal Deflection Output ■ Features ● Damper diode built-in ● Minimizes external component counts and simplifies circuitry ● High breakdown voltage, high reliability ● High speed switching ● Wide area of safety operation (ASO)

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Built-in damper diode • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

Power Transistor

Features ● High VCEO, VCEO=80V . ● High IC, IC=1A (DC) . ● Good hFE linearity . ● Low VCE (sat) . ● Epitaxial planer type ● NPN silicon transistor

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC=0.5A APPLICATIONS · Inverters · Motor Controls

Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for horizontal deflection output applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Wide area of safe operation • High voltage,high speed APPLICATIONS • Horizontal deflection output applications