NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The 2SD1692 is a darlington transistor built-in dumper diode at E-C. It is suitable for use to operate from IC without predriver, such as hammer driver.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS)= 100V(min.) ·DC Current Gain : hFE= 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 APPLICATIONS ·Designed for general-purpose amplifier applications.

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor • Complementary transistor: 2SB1149