Triple Diffused Planar NPN Silicon Transistor

Features 1) Low collector saturation voltage : VCE(sat)= 0.3V(Typ.)(IC/IB= 4A/0.4A) 2) Excellent current response of DC current gain (hFE). 3) High collector power dissipation: Pc=40W (Tc=25°C) 4) Wide ASO. 5) Easy packaging because of its mold type design

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A • High Collector Power Dissipation • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for low frequency power amplifier applications.

Audio Frequnecy Power Amplifier

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultra high h

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultr

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES • Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA) • Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)

Bipolar Transistor

The UTC 2SD1581 is a single type super high hFE transistor andlow collector saturation voltage and low power loss. This transistor isideal for use in high current drives such as mortars, relays, andramps. Ultra high hFEhFE = 800 to 3200 (@ VCE=5.0V, IC=500mA) Low collector saturation voltageVCE(SAT)=0.18V Typ. (@IC=1.0A, IB=10mA);

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES • Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA) • Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives. FEATURES • Ultra high hFE hFE = 800

Audio Frequency Power Amplifier

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFEtransistor and low collector saturation voltage and high voltage. This transistor is available for broad applications as variety of drives. FEATURES • Ultra high hFE hFE= 800 to 3

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1583-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Cirduits.

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1583-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Cirduits.

NPN Silicon Epitaxial Transistor

Features ● Low VCE(sat). ● High hFE.

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1583-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 800 to 3200 • Low VCE(sat): VCE(sat) = 0.18 V TYP.

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1584-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES ● High hFE : hFE = 800 to 3200 ● Low VCE(sat) : VCE(sat) = 0.25 V TYP.

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION 2SD1584-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES ● High hFE : hFE = 800 to 3200 ● Low VCE(sat) : VCE(sat) = 0.25 V TYP.

NPN Silicon Epitaxial Transistor

Features ● Low VCE(sat). ● High hFE.

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1584-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 800 to 3200 • Low VCE(sat): VCE(sat) = 0.25 V TYP.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·VCEO60V;VEBO7V;IC(DC)3.0A ·Complement to type 2SB1094 APPLICATIONS ·For use in audio frequency power amplifier and general purpose applications

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1584 is an NPN general purpose transistor designed for use in audio frequency power amplifier.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·VCEO≥60V;VEBO≥7V;IC(DC)≤3.0A ·Complement to type 2SB1094 APPLICATIONS ·For use in audio frequency power amplifier and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·VCEO≥60V;VEBO≥7V;IC(DC)≤3.0A ·Complement to type 2SB1094 APPLICATIONS ·For use in audio frequency power amplifier and general purpose applications

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD1585 is an NPN general purpose transistor designed for use in audio frequency amplifier. FEATURES ● Easy mount by eliminating Sheet and Bushing ● Complementary to the 2SB1094.

Color TV Vertical Deflection Output

Color TV Vertical Deflection Output

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Current:: IC= 2.0A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 500mA ·Complement to Type 2SB1096 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies or a variety of drive

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • Mold package that does not require an insulating board or insulation bushing • Large current capacity in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.5 V

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SB1097 • Low speed switching APPLICATIONS • For low frequency power amplifier applications

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

FEATURES • Mold package that does not require an insulating board or insulation bushing • Large current capacity in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A) • Ideal for use in ramp drivers or inductance drivers • Complementary transistor:

Silicon Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SB1097 • Low speed switching APPLICATIONS • For low frequency power amplifier applications

Silicon NPN Transistors

[JMNIC] Silicon NPN Transistors ◆ Features • With TO-220Fa package • Low frequency power amplifiers and low-speed switching • Complement to type 2SB1097

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Complement to type 2SB1097 • Low speed switching APPLICATIONS • For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON • Complement to type 2SB1098 • Low speed switching APPLICATIONS • Low frequency power amplifier • Low speed switching industrial use

Silicon Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON • Complement to type 2SB1098 • Low speed switching APPLICATIONS • Low frequency power amplifier • Low speed switching industrial use

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON • Complement to type 2SB1098 • Low speed switching APPLICATIONS • Low frequency power amplifier • Low speed switching industrial use

Audio Frequency Power Amplifier and Low Speed Switching Industrial Use

Audio Frequency Power Amplifier and Low Speed Switching Industrial Use

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NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

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Audio Frequency Power Amplifier

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