Audio Frequnecy Power Amplifier

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultra high h

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low collector saturation voltage and low power loss. This transistor is ideal for use in high current drives such as mortars, relays, and ramps. FEATURES • Ultr

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES • Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA) • Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)

Bipolar Transistor

The UTC 2SD1581 is a single type super high hFE transistor andlow collector saturation voltage and low power loss. This transistor isideal for use in high current drives such as mortars, relays, andramps. Ultra high hFEhFE = 800 to 3200 (@ VCE=5.0V, IC=500mA) Low collector saturation voltageVCE(SAT)=0.18V Typ. (@IC=1.0A, IB=10mA);

Transistor

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

FEATURES • Ultra high hFE hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA) • Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

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