isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) · High DC Current Gain : hFE= 1000(Min) @IC= 10A · Low Saturation Voltage APPLICATIONS · Designed for high current switching applications.

Silicon NPN Epitaxial

Application Low frequency amplifier, Muting

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SB1065 • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type 2SB1065 • Low collector saturation voltage APPLICATIONS • For use in low frequency power amplifier applications

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Epitaxial Planar NPN Silicon Transistor

[ROHM] Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transisor Features 1) Low collector saturation voltage: VCE(sat)=0.5V (Typ.) IC/iB=2A/0.2A 2) ASO is wide and resistant to breakdown. 3) Complementary pair with 2SB1065. 4) Easy installation into radiators.

NPN EPITAXIAL TYPE (PULSE MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE= 4000 (min) (VCE= 2 V, IC= 150 mA) • Low saturation voltage: VCE (sat)= 1.5 V (max) (IC= 1 A, IB= 1 mA)

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ IC= 1A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.

Silicon NPN epitaxial planer type darlington(For low-frequency output amplification)

Silicon NPN epitaxial planar type darlington For low-frequency output amplification ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4000 to 20 000. • A shunt resistor is omitted from the driver. •

Driver and output stages of audio frequency amplifiers

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor

TO-92 Plastic-Encapsulate Transistors

FEATURES Low Collector Saturation High DC Current Gain Complementary to The 2SB1068 PNP Transistor

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • High Speed Switching APPLICATIONS • Designed for power amplifier,power switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications.

MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

MEDIUM SPEED POWER AMPLIFIER

SILICON NPN EPITAXIAL MEDIUM SPEED POWER AMPLIFIER

Silicon NPN Epitaxial

Application Low frequency power amplifier

NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING APPLICATIONS)

High Current Switching Applications • High collector current: IC= 30 A • High DC current gain: hFE= 1000 (min) (VCE= 5 V, IC= 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

isc Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE = 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) APPLICATIONS ·Designed for high current switching applications.

Silicon NPN Triple Diffused

Application High voltage power amplifier

Silicon NPN Triple Diffused

Application High voltage power amplifier

Power Bipolar Transistors

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • High Speed Switching APPLICATIONS • Designed for power amplifier,power switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) • Good Linearity of hFE • Low Collector Saturation Voltage APPLICATIONS • Designed for AF output amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • High breakdown voltage • DARLINGTON APPLICATIONS • For high power amplification

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • Wide area of safe operation • High breakdown voltage • DARLINGTON APPLICATIONS • For high power amplification

Silicon NPN triple diffusion planar type Darlington(For high power amplification)

Silicon NPN triple diffusion planar type Darlington For high power amplification ■ Features ● Extremely satisfactory linearity of the forward current transfer ratio hFE ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Full-pack package which can be installed to the

Epitaxial Planar NPN Silicon Darlington Transistors

[ROHM] Features 1) Darlington connection provises high DC current gain (hFE). 2) Built-in resistance of approx. 4kΩ between its base and emitter. Excellent temprature stability.

Silicon NPN epitaxial planar type(For low-voltage switching)

For low-voltage switching Complementary to 2SB1070 and 2SB1070A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 90(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN epitaxial planar type(For low-voltage switching)

For low-voltage switching Complementary to 2SB1070 and 2SB1070A ■Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equ

Silicon NPN epitaxial planar type(For low-voltage switching)

Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071 and 2SB1071A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN epitaxial planar type(For low-voltage switching)

Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1071 and 2SB1071A ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package which can be installed to the heat sink with one screw

SI NPN TRIPLE DIFFUSED JUNCTION MESA

Si NPN Triple Diffused Junction Mesa Horizontal Deflection Output Features ● Built-in damper diode on chip ● High voltage and high reliability by glass passivation. ● High speed switching ● Wide area of safe operation (ASO) ● Full Pack package for simplified mounting only by a screw, requir

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage ,and high reliability ·Built-in damper diode ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage ,and high reliability ·Built-in damper diode ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Color TV horizontal output applications

TO-39(H) PACKAGE SERIES

TO-3P(H) IS PACKAGE SERIES Application TV.HOR.OUT

TO-39(H) PACKAGE SERIES

TO-3P(H) IS PACKAGE SERIES Application TV.HOR.OUT

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Color TV horizontal output applications

Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • Low Saturation Voltage APPLICATIONS • Color TV horizontal output applications • Switching regulator output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • Color TV horizontal output applications • Switching regulator output applications

TO-39(H) PACKAGE SERIES

TO-3P(H) IS PACKAGE SERIES Application TV.HOR.OUT

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) ● High Collector-Base Voltage(VCBO=1500V) ● High Speed Switching

TO-39(H) PACKAGE SERIES

TO-3P(H) IS PACKAGE SERIES Application TV.HOR.OUT

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Switching regulator output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Switching regulator output applications

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) ● High Collector-Base Voltage(VCBO=1500V) ● High Speed Switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • Color TV horizontal output applications • Switching regulator output applications

TO-39(H) PACKAGE SERIES

TO-3P(H) IS PACKAGE SERIES Application TV.HOR.OUT

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) High Speed Switching

2SD1548

Silicon NPN Power Transistors