Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN Planar, Darlington

Application High gain amplifier

Silicon NPN Planar, Darlington

Application High gain amplifier

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

For power amplification with high forward current transfer ratio ■Features •High forward current transfer ratio hFEwhich has satisfactory linearity •High emitter-base voltage (Collector open) VEBO •Full-pack package which can be installed to the heat sink with one screw

Silicon NPN epitaxial planar type

For power amplification with high forward current transfer ratio\n■ •High forward current transfer ratio hFEwhich has satisfactory linearity\n•High emitter-base voltage (Collector open) VEBO\n•Full-pack package which can be installed to the heat sink with one screw;

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE APPLICATIONS • Designed for power switching applications.

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planer type darlington For low-frequency amplification ■ Features ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. ● A shunt resistor is omitted from the driver.

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

Silicon NPN epitaxial planer type darlington For low-frequency amplification ■ Features ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. ● A shunt resistor is omitted from the driver.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage ,high reliability • High speed switching • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High voltage ,high reliability • High speed switching • Wide area of safe operation APPLICATIONS • For horizontal deflection output applications

Silicon NPN Epitaxial, Darlington

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Silicon NPN Epitaxial, Darlington

文件：193.24 Kbytes Page：6 Pages

Silicon NPN Epitaxial, Darlington

文件：213.93 Kbytes Page：6 Pages

Transistors>Switching/Bipolar

Silicon NPN Epitaxial, Darlington

文件：127.33 Kbytes Page：8 Pages

Silicon NPN Epitaxial, Darlington

文件：213.93 Kbytes Page：6 Pages

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 60V 6A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN DARL 50V 0.5A MINI-3

Good Linearity of hFE

文件：139.88 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 50V 0.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：137.43 Kbytes Page：3 Pages