Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Si PNP Epitaxial Planar

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB0937(2SB937)and 2SB0937A(2SB937A) ■Features ● High foward current transfer ratio hFE ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Si PNP Epitaxial Planar

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB0937(2SB937)and 2SB0937A(2SB937A) ■Features ● High foward current transfer ratio hFE ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipm

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Si PNP Epitaxial Planar

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB938 and 2SB938A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of sma

Silicon PNP epitaxial planar type Darlington(For power amplification and switching)

Si PNP Epitaxial Planar

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching Complementary to 2SB0939, 2SB0939A ■ Features • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon PNP epitaxial planar type Darlington

For midium-speed power switching Complementary to 2SD1262 and 2SD1262A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon PNP epitaxial planar type Darlington

For midium-speed power switching Complementary to 2SD1262 and 2SD1262A ■ Features ● High foward current transfer ratio hFE ● High-speed switching ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon NPN triple diffusion planar type Darlington

For midium speed power switching Complementary to 2SB0939, 2SB0939A ■ Features • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High collector to base voltage VCBO • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High breakdown voltalge APPLICATIONS ·For power amplification

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High collector to base voltage VCBO • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB940/940A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC APPLICATIONS ·For power amplification ·For TV vertical deflection output applications

Silicon PNP epitaxial planar type(For power amplification)

For power amplification For TV vertical deflection output Complementary to 2SD1264, 2SD1264A ■ Features • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN triple diffusion planar type

For low-freauency power amplification For TV vertical deflection output Complementary to 2SB940 and 2SB940A ■ Features ● High collector to emitter VCEO ● Large collector power dissipation PC ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB940/940A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC APPLICATIONS ·For power amplification ·For TV vertical deflection output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB940/940A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC APPLICATIONS ·For power amplification ·For TV vertical deflection output applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB940/940A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC APPLICATIONS ·For power amplification ·For TV vertical deflection output applications

Silicon PNP epitaxial planar type(For power amplification)

For power amplification For TV vertical deflection output Complementary to 2SD1264, 2SD1264A ■ Features • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN triple diffusion planar type

For low-freauency power amplification For TV vertical deflection output Complementary to 2SB940 and 2SB940A ■ Features ● High collector to emitter VCEO ● Large collector power dissipation PC ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN triple diffusion planar type

For low-freauency power amplification For TV vertical deflection output Complementary to 2SB940 and 2SB940A ■ Features ● High collector to emitter VCEO ● Large collector power dissipation PC ● Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications

NPN EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For audio frequency power applications

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE • Complement to Type 2SB941 APPLICATIONS • Designed for power amplification.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification

Silicon PNP epitaxial planar type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw

Silicon PNP epitaxial planar type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High forward current transfer ratio hFE which has satisfactory linearity • Low collector saturation voltage • Complement to type 2SB941/941A APPLICATIONS • For power amplification

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942(2SB942)and 2SB0942A(2SB942A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package

Silicon PNP epitaxial planar type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification

Silicon PNP epitaxial planar type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942(2SB942)and 2SB0942A(2SB942A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB942/942A APPLICATIONS ·For power amplification

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • Complement to Type 2SB943 APPLICATIONS • Designed for power switching applications.

Silicon PNP epitaxial planar type(For power switching)

Silicon PNP epitaxial planar type For power switching Complementary to 2SD1268 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package which can be installed to the heat

Silicon NPN epitaxial planar type(For power switching)

Silicon NPN epitaxial planar type For power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one screw.

Silicon NPN epitaxial planar type(For power switching)

Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat si

Silicon PNP epitaxial planar type(For power switching)

Silicon PNP epitaxial planar type For power switching Complementary to 2SD1269 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat si

Good Linearity of hFE

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) • Good Linearity of hFE • Complement to Type 2SB944 APPLICATIONS • Designed for power amplification.

Power Device - Power Transistors - General-Purpose power amplification

Power Device - Power Transistors - General-Purpose power amplification

Silicon NPN triple diffusion planar type darlington Power Transistors

Silicon NPN Power Transistors

文件：136.6 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：136.6 Kbytes Page：4 Pages

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 300V 0.75A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个