Silicon PNP epitaxial planar type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.2V(Max)@ IC= 3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) • Good Linearity of hFE • Complement to Type 2SB941 APPLICATIONS • Designed for power amplification.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw

Trans GP BJT NPN 60V 3A 3-Pin(3+Tab) TO-220

Silicon NPN Power Transistors

文件：136.87 Kbytes Page：4 Pages

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High forward current transfer ratio hFE which has satisfactory linearity • Low collector saturation voltage • Complement to type 2SB941/941A APPLICATIONS • For power amplification

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB941/941A APPLICATIONS ·For power amplification

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw

Silicon PNP epitaxial planar type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1266 and 2SD1266A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Full-pack package which can be installed to the heat sink with

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 60V 3A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：136.87 Kbytes Page：4 Pages

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 80V 3A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个