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2SD1252A晶体管资料
2SD1252A别名：2SD1252A三极管、2SD1252A晶体管、2SD1252A晶体三极管
2SD1252A生产厂家：日本松下公司
2SD1252A制作材料：Si-NPN
2SD1252A性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SD1252A封装形式：直插封装
2SD1252A极限工作电压：80V
2SD1252A最大电流允许值：3A
2SD1252A最大工作频率：30MHZ
2SD1252A引脚数：3
2SD1252A最大耗散功率：30W
2SD1252A放大倍数：
2SD1252A图片代号：B-62
2SD1252Avtest：80
2SD1252Ahtest：30000000
- 2SD1252Aatest：3
2SD1252Awtest：30
2SD1252A代换 2SD1252A用什么型号代替：BD241B,BD537,2SD1906,2SD2200,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD1252A | Silicon PNP epitaxial planar type(For power amplification) For power amplification Complementary to 2SD1252 and 2SD1252A ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin to the printed c | PANASONIC 松下 |   | |
2SD1252A | Silicon NPN triple diffusion planar type(For power amplification) For power amplification Complementary to 2SB0929 (2SB929)and 2SB0929A(2SB929A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin | PANASONIC 松下 | | |
2SD1252A | Silicon NPN Triple Diffusion Junction Type Features ● Power transistors. | KEXIN 科信电子 | | |
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Triple Diffusion Junction Type Features ● Power transistors. | KEXIN 科信电子 | | ||
Silicon NPN triple diffusion planar type(For power amplification) For power amplification Complementary to 2SB0929 (2SB929)and 2SB0929A(2SB929A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin | PANASONIC 松下 | | ||
Silicon PNP epitaxial planar type(For power amplification) For power amplification Complementary to 2SD1252 and 2SD1252A ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin to the printed c | PANASONIC 松下 | | ||
NPN Transistors 文件：1.1782 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.1782 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.1782 Mbytes Page：2 Pages | KEXIN 科信电子 | |
2SD1252A产品属性
- 类型
描述
- 型号
2SD1252A
- 制造商
PANASONIC
- 制造商全称
Panasonic Semiconductor
- 功能描述
Silicon NPN triple diffusion planar type(For power amplification)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC/松下 |
23+ |
TO-252 |
15800 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
PANASONIC/松下 |
2447 |
TO-262 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TAIFDIC |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
MAT |
24+ |
975 |
|||||
PANASONIC/松下 |
26+ |
TO-252 |
60000 |
只有原装,可配单 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
PANASONIC |
24+ |
NA |
3200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TAIFDIC |
22+ |
TO-251 |
20000 |
只做原装 |
|||
PANASONIC/松下 |
25+ |
TO-252 |
10000 |
全新原装现货库存 |
|||
22+ |
100000 |
代理渠道/只做原装/可含税 |
2SD1252A规格书下载地址
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2018-12-19
DdatasheetPDF页码索引
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