NPN Transistors

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Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN triple diffusion planar type(For power amplification)

For power amplification Complementary to 2SB0929 (2SB929)and 2SB0929A(2SB929A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin

Silicon PNP epitaxial planar type(For power amplification)

For power amplification Complementary to 2SD1252 and 2SD1252A ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin to the printed c

Silicon NPN Triple Diffusion Junction Type

Features ● Power transistors.