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2SD125晶体管资料

2SD125别名：2SD125三极管、2SD125晶体管、2SD125晶体三极管
2SD125生产厂家：日本日立公司
2SD125制作材料：Si-NPN
2SD125性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SD125封装形式：特殊封装
2SD125极限工作电压：100V
2SD125最大电流允许值：6A
2SD125最大工作频率：<1MHZ或未知
2SD125引脚数：2
2SD125最大耗散功率：60W
2SD125放大倍数：
2SD125图片代号：E-44
2SD125vtest：100
2SD125htest：999900
2SD125atest：6
2SD125wtest：60

2SD125代换 2SD125用什么型号代替：BD130,BD245C,BDV95,BDX10,BDX95,BDY20,BDY39,2N3055,2N5632,2N5633,

型号	功能描述	生产厂家企业	LOGO
2SD1250	Silicon PNP epitaxial planar type(For power amplification) For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A ■Features ● High collector to emitter VCEO ● High collector power dissipation PC ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of	Panasonic 松下	Panasonic
2SD1250	Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type packag	Panasonic 松下	Panasonic
2SD1250	Silicon NPN Triple Diffusion Planar Type ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Complementary to 2SB928	KEXIN 科信电子	KEXIN
2SD1250	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1250	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1250-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1250-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.15A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1250A	Silicon PNP epitaxial planar type(For power amplification) For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A ■Features ● High collector to emitter VCEO ● High collector power dissipation PC ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of	Panasonic 松下	Panasonic
2SD1250A	Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type packag	Panasonic 松下	Panasonic
2SD1251	Silicon NPN triple diffusion junction type(For power amplification) For power amplification ■ Features ● Wide area of safe operation (ASO) ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.	Panasonic 松下	Panasonic
2SD1251	Silicon NPN Triple Diffusion Junction Type ■ Features • Wide area of safe operation.	KEXIN 科信电子	KEXIN
2SD1251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1251-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1251-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1251A	Silicon NPN triple diffusion junction type(For power amplification) For power amplification ■ Features ● Wide area of safe operation (ASO) ● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.	Panasonic 松下	Panasonic
2SD1252	Silicon PNP epitaxial planar type(For power amplification) For power amplification Complementary to 2SD1252 and 2SD1252A ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin to the printed c	Panasonic 松下	Panasonic
2SD1252	Silicon NPN Triple Diffusion Junction Type Features ● Power transistors.	KEXIN 科信电子	KEXIN
2SD1252	Silicon NPN triple diffusion planar type(For power amplification) For power amplification Complementary to 2SB0929 (2SB929)and 2SB0929A(2SB929A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin	Panasonic 松下	Panasonic
2SD1252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1252-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1252-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1252A	Silicon PNP epitaxial planar type(For power amplification) For power amplification Complementary to 2SD1252 and 2SD1252A ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin to the printed c	Panasonic 松下	Panasonic
2SD1252A	Silicon NPN Triple Diffusion Junction Type Features ● Power transistors.	KEXIN 科信电子	KEXIN
2SD1252A	Silicon NPN triple diffusion planar type(For power amplification) For power amplification Complementary to 2SB0929 (2SB929)and 2SB0929A(2SB929A) ■Features ● High forward current transfer ratio hFEwhich has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the radiating fin	Panasonic 松下	Panasonic
2SD1253	Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the	Panasonic 松下	Panasonic
2SD1253	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■Features •High forward current transfer ratio hFEwhich has satisfactory linearity •Low collector-emitter saturation voltage VCE(sat) •N type package enabling direct soldering of the ra	Panasonic 松下	Panasonic
2SD1253	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1253	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1253-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1253-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1253A	Silicon PNP epitaxial planar type(For power amplification) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■Features •High forward current transfer ratio hFEwhich has satisfactory linearity •Low collector-emitter saturation voltage VCE(sat) •N type package enabling direct soldering of the ra	Panasonic 松下	Panasonic
2SD1253A	Silicon NPN triple diffusion planar type(For power amplification) Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB930 and 2SB930A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● N type package enabling direct soldering of the	Panasonic 松下	Panasonic
2SD1254	Silicon NPN epitaxial planar type(For power switching) Silicon NPN epitaxial planar type For power switching Complementary to 2SB931 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiat	Panasonic 松下	Panasonic
2SD1254	Silicon PNP epitaxial planar type(For power switching) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiati	Panasonic 松下	Panasonic
2SD1254	Silicon NPN epitaxial planar type Features ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory linearity of forward current transfer ratio hFE. ● Large collector current IC.	KEXIN 科信电子	KEXIN
2SD1254	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1254	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1254-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1254-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1255	isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC	ISC 无锡固电	ISC
2SD1255	Silicon PNP epitaxial planar type(For power switching) Silicon PNP epitaxial planar type For Power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circ	Panasonic 松下	Panasonic
2SD1256	Silicon NPN epitaxial planar type(For power switching) Silicon NPN epitaxial planar type For power switching Complementary to 2SB933 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiat	Panasonic 松下	Panasonic
2SD1256	Silicon PNP epitaxial planar type(For power switching) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiati	Panasonic 松下	Panasonic
2SD1256	Silicon NPN Epitaxial Planar Type Features ● Low collector-emitter saturation voltage VCE(sat). ● Satisfactory linearity of forward current transfer ratio hFE. ● Large collector current IC.	KEXIN 科信电子	KEXIN
2SD1256	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1256	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1256-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1256-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1257	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1257	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1257	Silicon NPN epitaxial planar type(For power switching) For power switching Complementary to 2SB934 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiating fin to the printe	Panasonic 松下	Panasonic
2SD1257	Silicon NPN Epitaxial Planar Type Features • Low collector-emitter saturation voltage VCE(sat). • Satisfactory linearity of forward current transfer ratio hFE. • Large collector current IC.	KEXIN 科信电子	KEXIN
2SD1257-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1257-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 60(Min)@ IC= 3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1257A	Silicon NPN Epitaxial Planar Type Features • Low collector-emitter saturation voltage VCE(sat). • Satisfactory linearity of forward current transfer ratio hFE. • Large collector current IC.	KEXIN 科信电子	KEXIN
2SD1257A	Silicon NPN epitaxial planar type(For power switching) For power switching Complementary to 2SB934 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● N type package enabling direct soldering of the radiating fin to the printe	Panasonic 松下	Panasonic
2SD1258	Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● N type package enabling direct soldering of the radiating f	Panasonic 松下	Panasonic
2SD1259	Silicon NPN Triple Diffusion Planar Type Features ● High forward current transfer ratio hFE. ● Satisfactory linearity of forward current transfer ratio hFE.	KEXIN 科信电子	KEXIN

2SD125产品属性

类型
描述
型号
2SD125
制造商
Distributed By MCM
功能描述
SUB ONLY TRANSISTOR TO-3 100V 6A 60W BEC

2SD125供应商更多...

更新时间：2025-10-4 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SD1252AP	TAIFD	24+	NA/	4250	原装现货,当天可交货,原型号开票	询价
深圳市金芯世纪电子有限公司	2SD1251		22+		100000	代理渠道/只做原装/可含税	询价
深圳市明嘉莱科技有限公司	2SD1251	PANASONIC/松下	25+	60V3A30W	880000	明嘉莱只做原装正品现货	询价
深圳市一线半导体有限公司	2SD1251-0	MAT	24+		2666		询价
深圳市河锋鑫科技有限公司	2SD1251	TOSHIBA/东芝	TO-252	22+	6000	十年配单,只做原装	询价
深圳市南科功率半导体有限公司	2SD1251	NK/南科功率	2025+	TO-252	986966	国产	询价
深圳市博中泰实业有限公司	2SD1252AP	TAIFDIC	24+	TO-251	60000	全新原装现货	询价
贸泽芯城（深圳）电子科技有限公司	2SD1250A	PANASONIC/松下	23+	TO-252	15000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市威尔健半导体有限公司	2SD1250A	FAIRCHILD/仙童	23+	TO-220	69820	终端可以免费供样,支持BOM配单!	询价
上海市鑫鸿达电子	2SD1251	PANASONIC/松下	2022+		600	全新原装货期两周	询价

2SD125芯片相关品牌

2SD125规格书下载地址

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2SD125数据表相关新闻

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2SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19

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2SD125晶体管资料

2SD125产品属性

2SD125供应商更多...

2SD125芯片相关品牌

2SD125规格书下载地址

2SD125参数引脚图相关

2SD125数据表相关新闻

2SD1616AG-TO92B-G-TG_UTC代理商

2SD1624G-SOT89R-T-TG_UTC代理商

2SD1616AG-TO92B-Y-TG_UTC代理商

2SC5569G-SOT89R-TG

2SC5826中文资料库

2SC945_2SC945晶体管_2SC945中文资料_2SC945代换

DdatasheetPDF页码索引