NPN EPITAXIAL PLANAR SILICON TRANSISTOR

NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Low collector saturation voltage • Wide ASO(safe operating area) • Complement to type 2SB825 APPLICATIONS • Universal high current switching as solenoid driving, • High speed inverter and converter. relay drivers

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Low collector-emitter saturation voltage • Complement to type 2SB824 APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Low collector-emitter saturation voltage • Complement to type 2SB824 APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications

50V / 5A Switching Applications

50V/5A Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching.