| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD1060 | Bipolar Transistor Features • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB= 0.3A Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching | ONSEMI 安森美半导体 |   | |
2SD1060 | 50V/5A Switching Applications 50V/5A Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. | SANYO 三洋 | | |
2SD1060 | 50V / 5A Switching Applications 50V/5A Switching Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A. Applications • Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. | SANYO 三洋 | | |
2SD1060 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=0.4V max/IC=3A, IB=0.3A | UTC 友顺 | | |
2SD1060 | Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector-emitter saturation voltage • Complement to type 2SB824 APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications | ISC 无锡固电 | | |
2SD1060 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 50V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= 0.3V(Max) @IC= 3A APPLICATIONS · High−Speed Inverters · Suitable for Relay Drivers · Converters | ISC 无锡固电 | | |
2SD1060 | Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector-emitter saturation voltage • Complement to type 2SB824 APPLICATIONS • Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications | JMNIC 锦美电子 | | |
2SD1060 | Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • Low collector saturation voltage • Wide ASO(safe operating area) • Complement to type 2SB825 APPLICATIONS • Universal high current switching as solenoid driving, • High speed inverter and converter. relay drivers | SAVANTIC | | |
2SD1060 | 双极晶体管，50V，5A，低 VCE(sat)，NPN TO-220-3L 2SD1060 is a Bipolar Transistor, 50V, 5A, Low VCE(sat), NPN TO-220-3L. • Low collector-to-emitter saturation voltage : VCE(sat)=0.3V max / IC=3A, IB=0.3A; | ONSEMI 安森美半导体 | | |
2SD1060 | Trans GP BJT NPN 50V 5A 3-Pin(3+Tab) TO-220 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SD1060 | Bipolar Transistor | UTC 友顺 | | |
2SD1060 | Silicon NPN Power Transistors 文件：141.68 Kbytes Page：4 Pages | SAVANTIC | | |
2SD1060 | Silicon NPN Power Transistors 文件：148.6 Kbytes Page：4 Pages | SAVANTIC | | |
2SD1060 | NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | |
2SD1060 | NPN Epitaxial Planar Silicon Transistor 50V / 5A Switching Applications 文件：300.23 Kbytes Page：4 Pages | SANYO 三洋 | | |
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN Epitaxial Planar Silicon Transistor 50V / 5A Switching Applications 文件：300.23 Kbytes Page：4 Pages | SANYO 三洋 | | ||
Silicon NPN Power Transistors 文件：133.94 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：133.94 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
封装/外壳：TO-220-3 包装：带盒（TB） 描述：TRANS NPN 50V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN 50V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | | ||
NPN PLANAR SILICON TRANSISTOR 文件：108.86 Kbytes Page：5 Pages | UTC 友顺 | |
2SD1060产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Polarity：
NPN
- Type：
Low VCE(sat)
- VCE(sat) Max (V)：
0.3
- IC Cont. (A)：
5
- VCEO Min (V)：
50
- VCBO (V)：
60
- VEBO (V)：
6
- hFE Min：
100
- hFE Max：
200
- fT Min (MHz)：
30
- PTM Max (W)：
1.75
- Package Type：
TO-220-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
22+ |
TO92 |
8000 |
原装正品支持实单 |
|||
UTC |
25+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
24+ |
TO-220 |
10000 |
全新 |
||||
UTC/友顺 |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO/三洋 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
UTC |
22+ |
TO252 |
20000 |
公司只有原装 品质保证 |
|||
UTC |
24+ |
SOT89 |
6000 |
深圳原装现货价格优势 |
|||
UTC/友顺 |
2540+ |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
||||
UTC |
25+ |
SOT-89 |
10000 |
原装正品,支持实单,可配单 |
2SD1060规格书下载地址
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2018-12-19
DdatasheetPDF页码索引
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