丝印代码：2SD1047；Power supply

Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 °C Ap

TO-3P Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Large current capacitance ● Complementary PNP Types:2SB817 APPLICATIONS ● High audio frequency output stage ● Power amplifier

Silicon NPN transistor in a TO-3P Plastic Package.

Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features For 60W audio frequency amplifier output stage, Complementary to 2SB817. Applications Designed for use in audio frequency amplifier.

POWER TRANSISTORS(12A,140V,100W)

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SB817

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

140V/12A AF 60W Output Applications

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：TRANS NPN 140V 12A TO3P 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

BJT 双极性三极管

三极管

音频三极管

Silicon NPN Power Transistors

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140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SB817E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS