Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SB817E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SB817

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

POWER TRANSISTORS(12A,140V,100W)

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band