丝印代码：2SD1047；Power supply

Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 °C Ap

Si NPN Triple Diffused

2SD1044 - Si NPN Diffused junction Mesa Darlington\n2SD1091 - Si NPN Triple Diffused Planar Darlington\n2SD1105 - Si NPN Diffused junction Mesa

SI NPN DIFFUSED JUNCTION MESA DARLINGTON

2SD1044 -> Si NPN Diffused junction Mesa Darlington 2SD1091 -> Si NPN Triple Diffused Planar Darlington 2SD1105 -> Si NPN Diffused junction Mesa

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V • High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high power amplifier applications.

Silicon NPN Power Transistors

· DESCRIPTION ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications

For LF Power Amp,50W Output, Large Power Switching

For LF Power Amplifier, 50W Output Large Power Switching Applications Features • Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). • Wide ASO because of built-in ballast resistance. • Goode dependence of fT on current and good H

Silicon NPN Power Transistors

· DESCRIPTION ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power ampli fier and swi tchi ng appl ications.

Silicon NPN transistor in a TO-3P Plastic Package.

Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features For 60W audio frequency amplifier output stage, Complementary to 2SB817. Applications Designed for use in audio frequency amplifier.

140V/12A, AF 60W Output Applications??????

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

POWER TRANSISTORS(12A,140V,100W)

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SB817

Silicon NPN Power Transistors

DESCRIPTION • Complement to type 2SB817 • With TO-3PN package APPLICATIONS • Power amplification • Low frequency and audio band

140V/12A AF 60W Output Applications

Features • Capable of being mounted easily because of one point fixing type plastic molded package (Inter changeable with TO-3). • Wide ASO because of on-chip ballast resistance. • Good depenedence of fT on current and excellent high frequency responce. The descriptions in pare

TO-3P Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Large current capacitance ● Complementary PNP Types:2SB817 APPLICATIONS ● High audio frequency output stage ● Power amplifier

140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Complement to Type 2SB817E • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

NPN Epitaxial Planar Silicon Transistors

Features ● Ultrasmall package allows miniaturization in end products. ● Large current capacity (IC=0.7A) and low-saturation voltage.

For General-Purpose AF Amplifier

General-Purpose AF Amplifier Applications Features • Ultrasmall package allows miniaturization in end products. • Large current capacity (IC=0.7A) and low-saturation voltage.

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

Bipolar Transistor

Features • Ultrasmall package allows miniaturization in end products • Large current capacity (IC=0.7A) and low-saturation voltage

TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING

TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING

High speed switching transistor

[COLLMER SEMICONDUCTOR] High speed switching transistor

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High current, • High speed switching • High reliability APPLICATIONS • Switching regulators • Motor controls • High frequency inverters • General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High current, • High speed switching • High reliability APPLICATIONS • Switching regulators • Motor controls • High frequency inverters • General purpose power amplifiers

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • High current, • High speed switching • High reliability APPLICATIONS • Switching regulators • Motor controls • High frequency inverters • General purpose power amplifiers

TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT, HIGH SPEED SWITCHING

TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED SWITCHING

Silicon NPN Power Transistor

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Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3PB

NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications

Silicon NPN Power Transistors

文件：198.46 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：201.07 Kbytes Page：4 Pages

NPN Transistors

文件：736.74 Kbytes Page：3 Pages

Bipolar Transistor

文件：68.91 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.7A 3CP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.7A 3CP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor

文件：68.91 Kbytes Page：4 Pages

NPN Transistors

文件：1.09704 Mbytes Page：3 Pages

NPN Transistors

文件：736.74 Kbytes Page：3 Pages

NPN Transistors

文件：1.09704 Mbytes Page：3 Pages

NPN Transistors

文件：736.74 Kbytes Page：3 Pages

NPN Transistors

文件：1.09704 Mbytes Page：3 Pages

NPN Transistors

文件：736.74 Kbytes Page：3 Pages

NPN Transistors

文件：1.09704 Mbytes Page：3 Pages

Silicon NPN Power Transistors

文件：146.45 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：120.87 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：120.87 Kbytes Page：3 Pages