NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ​​​​​​​● World Standard Miniature Package : SOT-89 ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007)

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl

Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1006, 1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES ● High Collector to Emitter Voltage : VCEO > 120 V (2SD1007) : VCEO > 100 V (2SD1006) ● Compl

NPN Silicon Epitaxial Transistor

Features ● High collector to emitter voltage: VCEO > 100V.

High collector to emitter vlotage

Features High collector to emitter voltage: VCEO > 100V.