NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers,lamp drivers,motor dri

High-Current Switching Applications

NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor

isc Silicon NPN Power Transistors

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