2SC607晶体管资料

  • 2SC607别名:2SC607三极管、2SC607晶体管、2SC607晶体三极管

  • 2SC607生产厂家:日本日立公司

  • 2SC607制作材料:Si-NPN

  • 2SC607性质:射频/高频放大 (HF)_TR_输出极 (E)

  • 2SC607封装形式:直插封装

  • 2SC607极限工作电压:75V

  • 2SC607最大电流允许值:0.6A

  • 2SC607最大工作频率:70MHZ

  • 2SC607引脚数:3

  • 2SC607最大耗散功率:1W

  • 2SC607放大倍数

  • 2SC607图片代号:C-40

  • 2SC607vtest:75

  • 2SC607htest:70000000

  • 2SC607atest:0.6

  • 2SC607wtest:1

  • 2SC607代换 2SC607用什么型号代替:BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2SC959,3DA103B,

2SC607价格

参考价格:¥1.7479

型号:2SC6076(TE16L1,NV) 品牌:Toshiba Semiconductor an 备注:这里有2SC607多少钱,2025年最近7天走势,今日出价,今日竞价,2SC607批发/采购报价,2SC607行情走势销售排行榜,2SC607报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SC607

PNP/NPN SILICON EPITAXIAL TRANSISTOR

Audio Frequency Amplifier

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching.

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Epitaxial Type

Power Amplifier Applications Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)( IC = 1A) High-speed switching: tstg = 0.4 μs (typ)

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process)

Power Amplifier Applications Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 μs (typ.)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process)

○ Power Amplifier Applications ○ Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max)( IC = 1A) • High-speed switching: tstg = 0.4 μs (typ)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Epitaxial Type (PCT Process)

○ Power Amplifier Applications ○ Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max)( IC = 1A) • High-speed switching: tstg = 0.4 μs (typ)

TOSHIBA

东芝

Silicon NPN Epitaxial Type

Power Amplifier Applications Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)( IC = 1A) High-speed switching: tstg = 0.4 μs (typ)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon NPN Epitaxial Type

TOSHIBA

东芝

Power transistor for high-speed switching applications

TOSHIBA

东芝

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 3A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

Power transistor for high-speed switching applications

TOSHIBA

东芝

2SC607产品属性

  • 类型

    描述

  • 型号

    2SC607

  • 功能描述

    PNP/NPN SILICON EPITAXIAL TRANSISTOR

更新时间:2025-12-25 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
23+
SOP
50000
全新原装正品现货,支持订货
TOSHIBA/东芝
2511
TO-252
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
TAIFDIC
23+
TO-220F
988888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA/东芝
24+
NA/
5250
原装现货,当天可交货,原型号开票
SANYO/三洋
20+
TO-3PF
38900
原装优势主营型号-可开原型号增税票
TOSHIBA/东芝
24+
TO-220
9600
原装现货,优势供应,支持实单!
三年内
1983
只做原装正品
24+
N/A
53000
一级代理-主营优势-实惠价格-不悔选择
TOSHIBA
2016+
TO252
3830
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA/东芝
21+
明嘉莱只做原装正品现货
2510000
TO-252

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