2SC607晶体管资料

  • 2SC607别名:2SC607三极管、2SC607晶体管、2SC607晶体三极管

  • 2SC607生产厂家:日本日立公司

  • 2SC607制作材料:Si-NPN

  • 2SC607性质:射频/高频放大 (HF)_TR_输出极 (E)

  • 2SC607封装形式:直插封装

  • 2SC607极限工作电压:75V

  • 2SC607最大电流允许值:0.6A

  • 2SC607最大工作频率:70MHZ

  • 2SC607引脚数:3

  • 2SC607最大耗散功率:1W

  • 2SC607放大倍数

  • 2SC607图片代号:C-40

  • 2SC607vtest:75

  • 2SC607htest:70000000

  • 2SC607atest:0.6

  • 2SC607wtest:1

  • 2SC607代换 2SC607用什么型号代替:BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2SC959,3DA103B,

2SC607价格

参考价格:¥1.7479

型号:2SC6076(TE16L1,NV) 品牌:Toshiba Semiconductor an 备注:这里有2SC607多少钱,2025年最近7天走势,今日出价,今日竞价,2SC607批发/采购报价,2SC607行情走势销售排行榜,2SC607报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC607

PNP/NPNSILICONEPITAXIALTRANSISTOR

AudioFrequencyAmplifier

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNEpitaxialPlanarSiliconTransistorHigh-CurrentSwitchingApplications

High-CurrentSwitchingApplications Applications •Relaydrivers,lampdrivers,motordrivers. Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType

PowerAmplifierApplications PowerSwitchingApplications Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)

PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)

○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType(PCTProcess)

○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconNPNEpitaxialType

PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 3A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

2SC607产品属性

  • 类型

    描述

  • 型号

    2SC607

  • 功能描述

    PNP/NPN SILICON EPITAXIAL TRANSISTOR

更新时间:2025-7-23 10:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
TO252
34560
只做全新原装进口现货
TOSHIBA/东芝
2511
TO-252
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
TOSHIBA/东芝
24+
TO-252
17500
郑重承诺只做原装进口现货
TOSHIBA/东芝
24+
TO-220
9600
原装现货,优势供应,支持实单!
SANYO/三洋
20+
TO-3PF
38900
原装优势主营型号-可开原型号增税票
TOSHIBA/东芝
24+
252-251
503499
免费送样原盒原包现货一手渠道联系
TOS
1203+
TO-220
150
原装现货海量库存欢迎咨询
24+
N/A
53000
一级代理-主营优势-实惠价格-不悔选择
TOSHIBA
24+
TO-252
65200
一级代理/放心采购
23+
TO
20000
正品原装货价格低

2SC607芯片相关品牌

  • AUSTIN
  • CIT
  • CONTRINEX
  • EPCOS
  • GMT
  • LRC
  • MOLEX5
  • OPLINK
  • Samtec
  • TOTAL-POWER
  • TSC
  • Vishay

2SC607数据表相关新闻