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2SC607晶体管资料
2SC607别名:2SC607三极管、2SC607晶体管、2SC607晶体三极管
2SC607生产厂家:日本日立公司
2SC607制作材料:Si-NPN
2SC607性质:射频/高频放大 (HF)_TR_输出极 (E)
2SC607封装形式:直插封装
2SC607极限工作电压:75V
2SC607最大电流允许值:0.6A
2SC607最大工作频率:70MHZ
2SC607引脚数:3
2SC607最大耗散功率:1W
2SC607放大倍数:
2SC607图片代号:C-40
2SC607vtest:75
2SC607htest:70000000
- 2SC607atest:0.6
2SC607wtest:1
2SC607代换 2SC607用什么型号代替:BC140,BC141,BC300,BC301,BC302,BFX96A,BFX97A,BSW53,BSW54,2SC959,3DA103B,
2SC607价格
参考价格:¥1.7479
型号:2SC6076(TE16L1,NV) 品牌:Toshiba Semiconductor an 备注:这里有2SC607多少钱,2025年最近7天走势,今日出价,今日竞价,2SC607批发/采购报价,2SC607行情走势销售排行榜,2SC607报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC607 | PNP/NPNSILICONEPITAXIALTRANSISTOR AudioFrequencyAmplifier | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
NPNEpitaxialPlanarSiliconTransistorHigh-CurrentSwitchingApplications High-CurrentSwitchingApplications Applications •Relaydrivers,lampdrivers,motordrivers. Features •AdoptionofMBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=120V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=1A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType PowerAmplifierApplications PowerSwitchingApplications Lowcollectoremittersaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType(PCTProcess) PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType(PCTProcess) ○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType(PCTProcess) ○PowerAmplifierApplications ○PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconNPNEpitaxialType PowerAmplifierApplications PowerSwitchingApplications Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) High-speedswitching:tstg=0.4μs(typ) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 3A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC |
2SC607产品属性
- 类型
描述
- 型号
2SC607
- 功能描述
PNP/NPN SILICON EPITAXIAL TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
TO252 |
34560 |
只做全新原装进口现货 |
|||
TOSHIBA/东芝 |
2511 |
TO-252 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
TOSHIBA/东芝 |
24+ |
TO-252 |
17500 |
郑重承诺只做原装进口现货 |
|||
TOSHIBA/东芝 |
24+ |
TO-220 |
9600 |
原装现货,优势供应,支持实单! |
|||
SANYO/三洋 |
20+ |
TO-3PF |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA/东芝 |
24+ |
252-251 |
503499 |
免费送样原盒原包现货一手渠道联系 |
|||
TOS |
1203+ |
TO-220 |
150 |
原装现货海量库存欢迎咨询 |
|||
24+ |
N/A |
53000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TOSHIBA |
24+ |
TO-252 |
65200 |
一级代理/放心采购 |
|||
23+ |
TO |
20000 |
正品原装货价格低 |
2SC607规格书下载地址
2SC607参数引脚图相关
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2SC607数据表相关新闻
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2018-12-19
DdatasheetPDF页码索引
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