Silicon NPN Epitaxial Type (PCT Process)

○ Power Amplifier Applications ○ Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max)（ IC = 1A） • High-speed switching: tstg = 0.4 μs (typ)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 3 A \nCollector Current ICP 5 A \nCollector power dissipation PC 1.8 W \nCollector-Base Voltage VCBO 160 V \nCollector-emitter voltage VCEO 80 V ;