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2SC602晶体管资料
2SC602别名：2SC602三极管、2SC602晶体管、2SC602晶体三极管
2SC602生产厂家：日本富士通公司_日本冲电气工业股份公司_日本东芝公
2SC602制作材料：Si-NPN
2SC602性质：超高频/特高频 （UHF）_宽频带放大 （A）_振荡级 （
2SC602封装形式：直插封装
2SC602极限工作电压：30V
2SC602最大电流允许值：0.03A
2SC602最大工作频率：800MHZ
2SC602引脚数：4
2SC602最大耗散功率：0.2W
2SC602放大倍数：
2SC602图片代号：D-13
2SC602vtest：30
2SC602htest：800000000
- 2SC602atest：0.03
2SC602wtest：0.2
2SC602代换 2SC602用什么型号代替：BF180,BF181,BF182,BF183,BF357,BF377,BF378,BF689,BF763,2N2857,3DG122D,
2SC602价格
参考价格：￥0.4565
型号：2SC6026CTGRTPL3 品牌：Toshiba 备注：这里有2SC602多少钱，2025年最近7天走势，今日出价，今日竞价，2SC602批发/采购报价，2SC602行情走势销售排行榜，2SC602报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv | SANYO 三洋 |   | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv | SANYO 三洋 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv | SANYO 三洋 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | | ||
NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz). | SANYO 三洋 | | ||
UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz). | SANYO 三洋 | | ||
UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz). | SANYO 三洋 | | ||
UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=12.5dB typ (f=2GHz). • Ultraminiature and thin flat leadless pack | SANYO 三洋 | | ||
NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=12.5dB typ (f=2GHz). | SANYO 三洋 | | ||
Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 100 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SA2154 • Lead (Pb) free | TOSHIBA 东芝 | | ||
General Purpose Amplifier Applications General Purpose Amplifier Applications • High voltage and high current : VCEO = 50V, IC = 100mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154CT | TOSHIBA 东芝 | | ||
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV | TOSHIBA 东芝 | | ||
General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV | TOSHIBA 东芝 | | ||
General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV | TOSHIBA 东芝 | | ||
General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV | TOSHIBA 东芝 | | ||
General-Purpose Amplifier Applications General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV | TOSHIBA 东芝 | | ||
NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications | ONSEMI 安森美半导体 | | ||
NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications | ONSEMI 安森美半导体 | | ||
UHF to C Band Low-Noise Amplifier and OSC Applications | ONSEMI 安森美半导体 | | ||
封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.1A CST3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-723 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 0.15A VESM 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
2SC602产品属性
- 类型
描述
- 型号
2SC602
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
NPN Epitaxial Planar Silicon Transistor DC/DC Converter Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Toshiba |
24+ |
原厂封装 |
2571 |
原装现货假一罚十 |
|||
SANYO/三洋 |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
25+ |
DFN |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
原装 |
20+ |
原装 |
56200 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA |
24+/25+ |
999999 |
原装正品现货库存价优 |
||||
TOSHIBA/东芝 |
22+ |
CST3 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
25+ |
17ROHS |
880000 |
明嘉莱只做原装正品现货 |
||||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
TOSHIBA |
24+ |
CST3 |
9000 |
只做原装正品 有挂有货 假一赔十 |
2SC602芯片相关品牌
2SC602规格书下载地址
2SC602参数引脚图相关
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2SC602数据表相关新闻
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2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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