位置:首页 > IC中文资料 > 2SC602

2SC602晶体管资料

  • 2SC602别名:2SC602三极管、2SC602晶体管、2SC602晶体三极管

  • 2SC602生产厂家:日本富士通公司_日本冲电气工业股份公司_日本东芝公

  • 2SC602制作材料:Si-NPN

  • 2SC602性质:超高频/特高频 (UHF)_宽频带放大 (A)_振荡级 (

  • 2SC602封装形式:直插封装

  • 2SC602极限工作电压:30V

  • 2SC602最大电流允许值:0.03A

  • 2SC602最大工作频率:800MHZ

  • 2SC602引脚数:4

  • 2SC602最大耗散功率:0.2W

  • 2SC602放大倍数

  • 2SC602图片代号:D-13

  • 2SC602vtest:30

  • 2SC602htest:800000000

  • 2SC602atest:0.03

  • 2SC602wtest:0.2

  • 2SC602代换 2SC602用什么型号代替:BF180,BF181,BF182,BF183,BF357,BF377,BF378,BF689,BF763,2N2857,3DG122D,

2SC602价格

参考价格:¥0.4565

型号:2SC6026CTGRTPL3 品牌:Toshiba 备注:这里有2SC602多少钱,2026年最近7天走势,今日出价,今日竞价,2SC602批发/采购报价,2SC602行情走势销售排行榜,2SC602报价。
型号 功能描述 生产厂家 企业 LOGO 操作

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 15V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor driv

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 250(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz).

SANYO

三洋

UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz).

SANYO

三洋

UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=14dB typ (f=2GHz).

SANYO

三洋

UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=12.5dB typ (f=2GHz). • Ultraminiature and thin flat leadless pack

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

UHF to C Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.2dB typ (f=2GHz). • High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=12.5dB typ (f=2GHz).

SANYO

三洋

Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 100 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SA2154 • Lead (Pb) free

TOSHIBA

东芝

General Purpose Amplifier Applications

General Purpose Amplifier Applications • High voltage and high current : VCEO = 50V, IC = 100mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154CT

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

General-Purpose Amplifier Applications

General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120 to 400 • Complementary to 2SA2154MFV

TOSHIBA

东芝

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications

ONSEMI

安森美半导体

UHF to C Band Low-Noise Amplifier and OSC Applications

ONSEMI

安森美半导体

封装/外壳:SC-101,SOT-883 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.1A CST3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:SOT-723 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.15A VESM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

2SC602产品属性

  • 类型

    描述

  • Polarity:

    NPN

  • VCEO(Max)(V):

    50

  • IC(Max)(A):

    0.1

  • hFE(Min):

    120

  • hFE(Max):

    400

  • VCE(sat)(Max)(V):

    0.25

  • ComplementaryProduct:

    2SA2154CT

  • Comments:

    Rank is specified by hFE range.

  • Number of pins:

    3

  • Surface mount package:

    Y

  • Package name:

    SOT-883 (CST3)

  • Width×Length×Height(mm):

    1.0 x 0.6 x 0.38

更新时间:2026-5-14 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
25+
CST3
9000
只做原装正品 有挂有货 假一赔十
TOSHIBA/东芝
24+
SOT-883
9000
只做原装,欢迎询价,量大价优
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
原装
20+
原装
56200
原装优势主营型号-可开原型号增税票
TOSHIBA/东芝
23+
CST3
31292
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA/东芝
24+
SOD883
900000
原装进口特价
三年内
1983
只做原装正品
26+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
25+
17ROHS
880000
明嘉莱只做原装正品现货
TOSHIBA/东芝
2447
CST3
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

2SC602数据表相关新闻