2SC602晶体管资料

  • 2SC602别名:2SC602三极管、2SC602晶体管、2SC602晶体三极管

  • 2SC602生产厂家:日本富士通公司_日本冲电气工业股份公司_日本东芝公

  • 2SC602制作材料:Si-NPN

  • 2SC602性质:超高频/特高频 (UHF)_宽频带放大 (A)_振荡级 (

  • 2SC602封装形式:直插封装

  • 2SC602极限工作电压:30V

  • 2SC602最大电流允许值:0.03A

  • 2SC602最大工作频率:800MHZ

  • 2SC602引脚数:4

  • 2SC602最大耗散功率:0.2W

  • 2SC602放大倍数

  • 2SC602图片代号:D-13

  • 2SC602vtest:30

  • 2SC602htest:800000000

  • 2SC602atest:0.03

  • 2SC602wtest:0.2

  • 2SC602代换 2SC602用什么型号代替:BF180,BF181,BF182,BF183,BF357,BF377,BF378,BF689,BF763,2N2857,3DG122D,

2SC602价格

参考价格:¥0.4565

型号:2SC6026CTGRTPL3 品牌:Toshiba 备注:这里有2SC602多少钱,2025年最近7天走势,今日出价,今日竞价,2SC602批发/采购报价,2SC602行情走势销售排行榜,2SC602报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEpitaxialPlanarSiliconTransistorUHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

UHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

UHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

UHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14GHztyp(VCE=1V).:fT=21GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=12.5dBtyp(f=2GHz). •Ultraminiatureandthinflatleadlesspack

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

NPNEpitaxialPlanarSiliconTransistorUHFtoCBandLow-NoiseAmplifierandOSCApplications

UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14GHztyp(VCE=1V). :fT=21GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=12.5dBtyp(f=2GHz).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNEpitaxialType(PCTProcess)General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent :VCEO=50V,IC=100mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SA2154 •Lead(Pb)free

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

GeneralPurposeAmplifierApplications

GeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=100mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154CT

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

General-PurposeAmplifierApplications

General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:SC-101,SOT-883 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.1A CST3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:SOT-723 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.15A VESM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

2SC602产品属性

  • 类型

    描述

  • 型号

    2SC602

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    NPN Epitaxial Planar Silicon Transistor DC/DC Converter Applications

更新时间:2025-7-22 9:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Toshiba Semiconductor and Stor
25+
SC-101 SOT-883
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
三年内
1983
只做原装正品
TOSHIBA
2025+
12420
TOSHIBA
24+/25+
999999
原装正品现货库存价优
SANYO
23+
SOT343
3000
全新原装正品现货,支持订货
SANYO/三洋
24+
NA/
53250
原装现货,当天可交货,原型号开票
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
PLINGSEMIC/鹏领
24+
SOT-883
60000
TOSHIBA/东芝
24+
SOD883
900000
原装进口特价
ON
23+
SSFP
63000
原装正品现货

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2SC602数据表相关新闻