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2SC602晶体管资料
2SC602别名:2SC602三极管、2SC602晶体管、2SC602晶体三极管
2SC602生产厂家:日本富士通公司_日本冲电气工业股份公司_日本东芝公
2SC602制作材料:Si-NPN
2SC602性质:超高频/特高频 (UHF)_宽频带放大 (A)_振荡级 (
2SC602封装形式:直插封装
2SC602极限工作电压:30V
2SC602最大电流允许值:0.03A
2SC602最大工作频率:800MHZ
2SC602引脚数:4
2SC602最大耗散功率:0.2W
2SC602放大倍数:
2SC602图片代号:D-13
2SC602vtest:30
2SC602htest:800000000
- 2SC602atest:0.03
2SC602wtest:0.2
2SC602代换 2SC602用什么型号代替:BF180,BF181,BF182,BF183,BF357,BF377,BF378,BF689,BF763,2N2857,3DG122D,
2SC602价格
参考价格:¥0.4565
型号:2SC6026CTGRTPL3 品牌:Toshiba 备注:这里有2SC602多少钱,2025年最近7天走势,今日出价,今日竞价,2SC602批发/采购报价,2SC602行情走势销售排行榜,2SC602报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=15V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEpitaxialPlanarSiliconTransistorDC/DCConverterApplications DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •NarrowhFErange. •Highallowablepowerdissipation. Applications •Relaydrivers,lampdrivers,motordriv | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=250(Min)@IC=0.5A APPLICATIONS ·DC-DCconverter,relaydrivers,lampdrivers,motor drivers,inverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEpitaxialPlanarSiliconTransistorUHFtoCBandLow-NoiseAmplifierandOSCApplications UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
UHFtoCBandLow-NoiseAmplifierandOSCApplications UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
UHFtoCBandLow-NoiseAmplifierandOSCApplications UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14.5GHztyp(VCE=1V). fT=22GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=14dBtyp(f=2GHz). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
UHFtoCBandLow-NoiseAmplifierandOSCApplications UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14GHztyp(VCE=1V).:fT=21GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=12.5dBtyp(f=2GHz). •Ultraminiatureandthinflatleadlesspack | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPNEpitaxialPlanarSiliconTransistorUHFtoCBandLow-NoiseAmplifierandOSCApplications UHFtoCBandLow-NoiseAmplifierandOSCApplications Features •Low-noiseuse:NF=1.2dBtyp(f=2GHz). •Highcut-offfrequency:fT=14GHztyp(VCE=1V). :fT=21GHztyp(VCE=3V). •Lowoperatingvoltage. •Highgain:|S21e|2=12.5dBtyp(f=2GHz). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNEpitaxialType(PCTProcess)General-PurposeAmplifierApplications General-PurposeAmplifierApplications •Highvoltageandhighcurrent :VCEO=50V,IC=100mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SA2154 •Lead(Pb)free | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
GeneralPurposeAmplifierApplications GeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=100mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154CT | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
General-PurposeAmplifierApplications General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
General-PurposeAmplifierApplications General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
General-PurposeAmplifierApplications General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
General-PurposeAmplifierApplications General-PurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) •ExcellenthFElinearity:hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(typ.) •HighhFE:hFE=120to400 •Complementaryto2SA2154MFV | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
封装/外壳:SC-101,SOT-883 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.1A CST3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:SOT-723 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.15A VESM 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC |
2SC602产品属性
- 类型
描述
- 型号
2SC602
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
NPN Epitaxial Planar Silicon Transistor DC/DC Converter Applications
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Stor |
25+ |
SC-101 SOT-883 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
TOSHIBA |
2025+ |
12420 |
|||||
TOSHIBA |
24+/25+ |
999999 |
原装正品现货库存价优 |
||||
SANYO |
23+ |
SOT343 |
3000 |
全新原装正品现货,支持订货 |
|||
SANYO/三洋 |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
PLINGSEMIC/鹏领 |
24+ |
SOT-883 |
60000 |
||||
TOSHIBA/东芝 |
24+ |
SOD883 |
900000 |
原装进口特价 |
|||
ON |
23+ |
SSFP |
63000 |
原装正品现货 |
2SC602规格书下载地址
2SC602参数引脚图相关
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- 2SC59
- 2SC58A
- 2SC589
- 2SC588
- 2SC587A
- 2SC587
- 2SC586
2SC602数据表相关新闻
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2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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