2SC589晶体管资料
2SC589别名：2SC589三极管、2SC589晶体管、2SC589晶体三极管
2SC589生产厂家：日本松下公司_日本索尼公司
2SC589制作材料：Si-NPN
2SC589性质：视频输出 （Vid）
2SC589封装形式：直插封装
2SC589极限工作电压：165V
2SC589最大电流允许值：0.08A
2SC589最大工作频率：200MHZ
2SC589引脚数：3
2SC589最大耗散功率：0.75W
2SC589放大倍数：
2SC589图片代号：C-40
2SC589vtest：165
2SC589htest：200000000
- 2SC589atest：0.08
2SC589wtest：0.75
2SC589代换 2SC589用什么型号代替：BF257,BF258,BF259,BF336,BF657,BF658,BF659,BFR57,BFT47,2N5058,2N5059,3DK10K,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Epitaxial UHF / VHF wide band amplifier Features • High gain bandwidth product: fT = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) • High withstanding to ESD of collector to emit | RENESAS 瑞萨 |   | ||
High Gain Bandwidth Product DESCRIPTION • High Gain Bandwidth Product fT = 7.8 GHz TYP. • High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS • Designed for use in UHF ~ VHF wide band amplifier. | ISC 无锡固电 | | ||
Silicon NPN RF Transistor DESCRIPTION • High Gain Bandwidth Product fT = 7.8 GHz TYP. • High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS • Designed for use in UHF ~ VHF wide band amplifier. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.8 dB typ. at f = 1.8 GHz | RENESAS 瑞萨 | | ||
Silicon NPN epitaxial planar type ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior forward current transfer ratio hFE linearity • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed | PANASONIC 松下 | | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1700V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. | SANYO 三洋 | | ||
Transistors>Amplifiers/Bipolar | RENESAS 瑞萨 | | ||
Transistor-Small Signal Bip-TRSs for High Frequency Amplifier | RENESAS 瑞萨 | | ||
Silicon NPN Power Transistors 文件：206.83 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：205.26 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：151.56 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：128.25 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：151.56 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：151.56 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Power Device - Power Transistors - Television/Display | PANASONIC 松下 | | ||
Silicon NPN epitaxial planar type 文件：61.56 Kbytes Page：2 Pages | PANASONIC 松下 | |
2SC589产品属性
- 类型
描述
- Number of Elements per Chip：
1
- Minimum DC Current Gain：
100@20mA@5V
- Maximum Transition Frequency：
7800(Typ)MHz
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
1.5V
- Maximum DC Collector Current：
0.075A
- Maximum Collector Emitter Voltage：
12V
- Maximum Collector Base Voltage：
20V
- Material：
Si
- Configuration：
Single
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PANASONIC/松下 |
2026+ |
TO3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
NEC |
24+ |
CAN |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
25+ |
CAN to-39 |
20000 |
原装，请咨询 |
|||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
ST |
26+ |
CAN to-39 |
60000 |
只有原装 可配单 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PANASONIC/松下 |
2450+ |
TO-3P |
9485 |
只做原装正品现货或订货假一赔十! |
|||
PANASONIC/松下 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
2SC589规格书下载地址
2SC589参数引脚图相关
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2SC589数据表相关新闻
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2018-12-19
DdatasheetPDF页码索引
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