Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product: fT = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) • High withstanding to ESD of collector to emit

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 7.8 GHz TYP. • High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS • Designed for use in UHF ~ VHF wide band amplifier.

Silicon NPN RF Transistor

DESCRIPTION • High Gain Bandwidth Product fT = 7.8 GHz TYP. • High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz APPLICATIONS • Designed for use in UHF ~ VHF wide band amplifier.

Transistors>Amplifiers/Bipolar

Trans GP BJT NPN 12V 0.075A 3-Pin MPAK