功率三极管

丝印代码：C5886；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High-Speed Swtching Applications

High-Speed Swtching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 55 ns (typ.)

丝印代码：C5886A；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon NPN Power Transistor

DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications

High-Speed Switching Applications

High-Speed Switching Applications DC/DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 95 ns (typ.)