High-Speed Switching Applications

High-Speed Switching Applications DC/DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 95 ns (typ.)

丝印代码：C5886A；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc Silicon NPN Power Transistor

DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications

Power transistor for high-speed switching applications

Feature：High hFE\nApplication Scope：High-speed switching / High current switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 5 A \nCollector power dissipation PC 20 W \nCollector power dissipation PC 1 W \nCollector-Base Voltage VCBO 120 V \nCollector-emitter voltage VCEO 50 V ;

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：PB-F VOLTAGE REGULATOR NEW PW-MO 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：TRANSISTOR NPN BIPO PWMOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：C5886；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High-Speed Swtching Applications

High-Speed Swtching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 55 ns (typ.)