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2SC581晶体管资料

  • 2SC581别名:2SC581三极管、2SC581晶体管、2SC581晶体三极管

  • 2SC581生产厂家:日本松下公司

  • 2SC581制作材料:Si-NPN

  • 2SC581性质:射频/高频放大 (HF)

  • 2SC581封装形式:直插封装

  • 2SC581极限工作电压:30V

  • 2SC581最大电流允许值:0.03A

  • 2SC581最大工作频率:230MHZ

  • 2SC581引脚数:4

  • 2SC581最大耗散功率:0.142W

  • 2SC581放大倍数

  • 2SC581图片代号:D-13

  • 2SC581vtest:30

  • 2SC581htest:230000000

  • 2SC581atest:0.03

  • 2SC581wtest:0.142

  • 2SC581代换 2SC581用什么型号代替:BF240,BF241,BF254,BF255,BF454,BF494,BF594,BF595,3SG110C,3DG110E,

型号 功能描述 生产厂家 企业 LOGO 操作

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Feature high-voltage: VCBO = 1600V. • High reliability (HVP process adopted). · MBIT process adopted.

SANYO

三洋

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application\n• High power gain, Low noise figure at low power operation:\n   |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

RENESAS

瑞萨

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

PANASONIC

松下

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

ISAHAYA

谏早电子

丝印代码:EE;For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

ISAHAYA

谏早电子

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

ISAHAYA

谏早电子

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

ISAHAYA

谏早电子

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

High-Speed Switching Applications

High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.)

TOSHIBA

东芝

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

ONSEMI

安森美半导体

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

PANASONIC

松下

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN 80V 1.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件:157.04 Kbytes Page:2 Pages

ISAHAYA

谏早电子

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件:157.04 Kbytes Page:2 Pages

ISAHAYA

谏早电子

丝印代码:EE;FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE

文件:97.29 Kbytes Page:2 Pages

ISAHAYA

谏早电子

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE

文件:97.29 Kbytes Page:2 Pages

ISAHAYA

谏早电子

High-Speed Switching Applications

文件:147.23 Kbytes Page:5 Pages

TOSHIBA

东芝

封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS NPN 20V 1.5A PW-MINI 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

High-Speed Switching Applications

文件:147.23 Kbytes Page:5 Pages

TOSHIBA

东芝

2SC581产品属性

  • 类型

    描述

  • Polarity:

    NPN

  • Features:

    Low Satulation Voltage

  • VCEO(Max)(V):

    50

  • IC(Max)(A):

    1

  • hFE(Min):

    400

  • hFE(Max):

    1000

  • VCE(sat)(Max)(V):

    0.17

  • Number of pins:

    3

  • Surface mount package:

    Y

  • Package name:

    PW-Mini

  • Width×Length×Height(mm):

    4.6 x 4.2 x 1.6

更新时间:2026-5-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2016+
SOT-89
3500
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
24+
SOT89
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TOSHIBA/东芝
2026+
SOT-89
54648
百分百原装现货 实单必成
TOSHIBA
24+/25+
545
原装正品现货库存价优
TOSHIBA/东芝
25+
SOT-89
20000
原装
TOSHIBA
19+
SOT89
20000
1780
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
5880
B
SOT-89
2111
92
TOSHIBA/东芝
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA(东芝)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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