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2SC581晶体管资料
2SC581别名：2SC581三极管、2SC581晶体管、2SC581晶体三极管
2SC581生产厂家：日本松下公司
2SC581制作材料：Si-NPN
2SC581性质：射频/高频放大 （HF）
2SC581封装形式：直插封装
2SC581极限工作电压：30V
2SC581最大电流允许值：0.03A
2SC581最大工作频率：230MHZ
2SC581引脚数：4
2SC581最大耗散功率：0.142W
2SC581放大倍数：
2SC581图片代号：D-13
2SC581vtest：30
2SC581htest：230000000
- 2SC581atest：0.03
2SC581wtest：0.142
2SC581代换 2SC581用什么型号代替：BF240,BF241,BF254,BF255,BF454,BF494,BF594,BF595,3SG110C,3DG110E,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.) | TOSHIBA 东芝 |   | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Feature high-voltage: VCBO = 1600V. • High reliability (HVP process adopted). · MBIT process adopted. | SANYO 三洋 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) | RENESAS 瑞萨 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) | RENESAS 瑞萨 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing | Panasonic 松下 | | ||
For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle | ISAHAYA 谏早电子 | | ||
For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle | ISAHAYA 谏早电子 | | ||
For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle | ISAHAYA 谏早电子 | | ||
For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle | ISAHAYA 谏早电子 | | ||
High-Speed Switching Applications High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.) | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications | ONSEMI 安森美半导体 | | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier | RENESAS 瑞萨 | | ||
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires | Panasonic 松下 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 80V 1.5A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Panasonic 松下 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：157.04 Kbytes Page：2 Pages | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：157.04 Kbytes Page：2 Pages | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE 文件：97.29 Kbytes Page：2 Pages | ISAHAYA 谏早电子 | | ||
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE 文件：97.29 Kbytes Page：2 Pages | ISAHAYA 谏早电子 | | ||
High-Speed Switching Applications 文件：147.23 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 20V 1.5A PW-MINI 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
High-Speed Switching Applications 文件：147.23 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
2SC581产品属性
- 类型
描述
- 型号
2SC581
- 功能描述
MOSFET Power Trans 100V 0.17V Vce 85ns
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISAHAYA |
05+08+P |
SOT23 |
45000 |
原装现货 |
|||
MITSUMI |
06+ |
23 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
国产 |
|||
PANASONIC/松下 |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
|||
MITSUBISHI/三菱 |
24+ |
SOT23 |
60000 |
全新原装现货 |
|||
ISD |
24+ |
SOT-23 |
3000 |
原装现货假一罚十 |
|||
MITSUBISHI/三菱 |
24+ |
SOT23 |
22055 |
郑重承诺只做原装进口现货 |
|||
MITSUBISHI/三菱 |
23+ |
SOT-23 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ISAHAYA |
24+ |
NA/ |
24000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MITSUBIS |
20+ |
SOT23 |
49000 |
原装优势主营型号-可开原型号增税票 |
2SC581芯片相关品牌
2SC581规格书下载地址
2SC581参数引脚图相关
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2SC581数据表相关新闻
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2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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