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2SC576晶体管资料

  • 2SC576别名:2SC576三极管、2SC576晶体管、2SC576晶体三极管

  • 2SC576生产厂家:日本松下公司

  • 2SC576制作材料:Si-NPN

  • 2SC576性质:高速开关 (SS)

  • 2SC576封装形式:直插封装

  • 2SC576极限工作电压:40V

  • 2SC576最大电流允许值:0.5A

  • 2SC576最大工作频率:<1MHZ或未知

  • 2SC576引脚数:3

  • 2SC576最大耗散功率:0.36W

  • 2SC576放大倍数

  • 2SC576图片代号:D-8

  • 2SC576vtest:40

  • 2SC576htest:999900

  • 2SC576atest:0.5

  • 2SC576wtest:0.36

  • 2SC576代换 2SC576用什么型号代替:BSS10,BSS26,BSS40,BSS41,BSV59,BSX26,BSX39,BSX49,2N3261,2N3737,

型号 功能描述 生产厂家 企业 LOGO 操作

NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA

NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) packag

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) packag

RENESAS

瑞萨

NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA

NEC

瑞萨

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Fast Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulators applications.

ISC

无锡固电

isc Silicon NPN Power Transistors

DESCRIPTION · Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) · Fast Switching Speed · Wide Area of Safe Operation APPLICATIONS · Designed for switching regulators applications.

ISC

无锡固电

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

SANYO

三洋

MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS

MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA)

TOSHIBA

东芝

MEDIUM POWER AMPLIFIER STROBO FLASH

DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)

UTC

友顺

Bipolar Transistor

* medium power amplifier applications * strobo flash applications • Low Saturation Voltage: VCE(sat) = 0.27 V (max.), \n•  (Ic = 3A / IB =60 mA);

UTC

友顺

Switching Regulator Applications

ONSEMI

安森美半导体

Switching Regulator Applications

ONSEMI

安森美半导体

MEDIUM POWER AMPLIFIER STROBO FLASH

文件:188.3 Kbytes Page:4 Pages

UTC

友顺

MEDIUM POWER AMPLIFIER STROBO FLASH

文件:188.3 Kbytes Page:4 Pages

UTC

友顺

MEDIUM POWER AMPLIFIER STROBO FLASH

文件:188.3 Kbytes Page:4 Pages

UTC

友顺

2SC576产品属性

  • 类型

    描述

  • BVCEO(V):

    10

  • BVCBO(V):

    15

  • IC(A):

    5

  • HFE_MIN.:

    450

  • HFE_MAX.:

    700

  • HFEtest_IC(mA):

    500

  • HFEtest_VCE(V):

    1.5

  • VCE(Sat)(V)MAX.:

    0.27

  • VCE(Sat)test_IC(mA):

    3000

  • VCE(Sat)test_Ib(mA):

    60

  • Package:

    TO-92SP

更新时间:2026-5-14 12:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
2016+
SOT23
69000
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS/瑞萨
2511
SOT-23
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
TOSHIBA/东芝
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
TOSHIBA/东芝
2450+
SOT23F
8850
只做原装正品假一赔十为客户做到零风险!!
SANYO/三洋
23+
TO-220F
900000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA/东芝
专业铁帽
CAN3
5600
原装铁帽专营,代理渠道量大可订货
SANYO
18+
TO-220F
85600
保证进口原装可开17%增值税发票
SANYO
23+
TO-220F
2996
原厂原装正品
RENESAS/瑞萨
2447
SOT-23
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
HITACHI
最新
SOT-23
35689
原装进口现货库存专业工厂研究所配单供货

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