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2SC563晶体管资料
2SC563(A)别名：2SC563(A)三极管、2SC563(A)晶体管、2SC563(A)晶体三极管
2SC563(A)生产厂家：日本松下公司
2SC563(A)制作材料：Si-NPN
2SC563(A)性质：射频/高频放大 （HF）_中频放大 （ZF）
2SC563(A)封装形式：直插封装
2SC563(A)极限工作电压：
2SC563(A)最大电流允许值：
2SC563(A)最大工作频率：550MHZ
2SC563(A)引脚数：4
2SC563(A)最大耗散功率：
2SC563(A)放大倍数：
2SC563(A)图片代号：D-18
2SC563(A)vtest：0
2SC563(A)htest：550000000
- 2SC563(A)atest：0
2SC563(A)wtest：0
2SC563(A)代换 2SC563(A)用什么型号代替：BF173,BF198,BF199,BF224,BF225,BF311,BF505,3DG112B,
2SC563价格
参考价格：￥0.9086
型号：2SC563200L 品牌：Panasonic 备注：这里有2SC563多少钱，2025年最近7天走势，今日出价，今日竞价，2SC563批发/采购报价，2SC563行情走势销售排行榜，2SC563报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC563 | Si NPN Epitaxial Planar 文件：43.78 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz | RENESAS 瑞萨 | | ||
Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For high-frequency amplification and switching ■ Features • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing | Panasonic 松下 | | ||
SMALL-SIGNAL TRANSISTOR DESCRIPTION 2SC5633 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for high voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.5V max ● Super mini package for easy mounting APPLICATION For Hybrid IC, DC-DC conv | ISAHAYA 谏早电子 | | ||
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=8.0GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. A | ISAHAYA 谏早电子 | | ||
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE ▪ Super mini package for easy mounting. ▪ High gain bandwidth product. fT=8.0GHz ▪ High gain,low noise. ▪ Can operate at low voltage | ISAHAYA 谏早电子 | | ||
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=8.0GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. A | ISAHAYA 谏早电子 | | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. | SANYO 三洋 | | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. | SANYO 三洋 | | ||
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. | SANYO 三洋 | | ||
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others | Panasonic 松下 | | ||
三极管(BJT) | Panasonic 松下 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT） 描述：RF TRANS NPN 8V 1.1GHZ SMINI3-G1 分立半导体产品 晶体管 - 双极（BJT）- 射频 | Panasonic 松下 | | ||
封装/外壳：SC-85 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 8V 1.1GHZ SMINI3-F2 分立半导体产品 晶体管 - 双极（BJT）- 射频 | Panasonic 松下 | | ||
晶体管（PNP、NPN） | ETC 知名厂家 | ETC | | |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：133.53 Kbytes Page：2 Pages | ISAHAYA 谏早电子 | | ||
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE 文件：133.53 Kbytes Page：2 Pages | ISAHAYA 谏早电子 | | ||
8 GHz Wideband NPN Chip 文件：437.16 Kbytes Page：5 Pages | SS | | ||
Si NPN Epitaxial Planar 文件：43.78 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
2SC563产品属性
- 类型
描述
- 型号
2SC563
- 功能描述
TRANS NPN 8VCEO 50MA S-MINI 3P
- RoHS
否
- 类别
分离式半导体产品 >> RF 晶体管(BJT)
- 系列
-
- 产品变化通告
Product Discontinuation 17/Dec/2010
- 标准包装
1
- 系列
-
- 晶体管类型
NPN 电压 -
- 集电极发射极击穿（最大）
4.7V 频率 -
- 转换
47GHz
- 噪声系数（dB典型值@频率）
0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
- 增益
9dB ~ 31dB 功率 -
- 最大
160mW 在某 Ic、Vce
- 时的最小直流电流增益(hFE)
160 @ 25mA，3V 电流 -
- 集电极(Ic)（最大）
45mA
- 安装类型
表面贴装
- 封装/外壳
4-SMD，扁平引线
- 供应商设备封装
4-TSFP
- 包装
Digi-Reel®
- 其它名称
BFP 740FESD E6327DKR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IASHAYA |
18+ |
SOT-89 |
34418 |
全新原装现货,可出样品,可开增值税发票 |
|||
IASHAYA |
23+ |
SOT-89 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
Panasonic |
24+ |
SOT-70 |
24000 |
原装现货假一罚十 |
|||
IASHAYA |
24+ |
NA/ |
67 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ISAHAYA |
25+ |
SOT323 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA/东芝 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
RENESAS/瑞萨 |
22+ |
SOT-89 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ISAHAYA |
24+ |
SMD |
9800 |
一级代理/全新原装现货/长期供应! |
|||
N/A |
25+ |
CAN |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
2SC563芯片相关品牌
2SC563规格书下载地址
2SC563参数引脚图相关
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2SC563数据表相关新闻
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2018-12-19
DdatasheetPDF页码索引
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