NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., ½S21e½2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Built-in 2 transistors (2 ´ 2SC5600) • F

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., ½S21e½2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • Built-in 2 transistors (2 ´ 2SC5600) • 6-pin lead-less minimol

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Bui

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION

FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, strob

Silicon PNP epitaxial planer type

* High foward current transfer ratio hFE * SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. Applications · Relay drivers, lamp drivers, motor drivers, strobes

60V / 5A High-Speed Switching Applications

60V / 5A High-Speed Switching Applications Features · Low collector-to-emitter saturation voltage. · Excellent dependence of hFEon current. · High-speed switching. · Micaless package facilitating mounting. Applications · Various inductance lamp drivers for electrical equip

NPN TRILE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV

1. High Voltage : VCBO= 2000 V 2. Low Saturation Voltage : VCE (sat)= 3 V (Max.) 3. High Speed : tf = 0.15µs (Typ.)

SMALL-SIGNAL TRANSISTOR

[Isahaya] DESCRIPTION 2SC5619 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. Features ● High fT fT = 4.5GHz standard. ● Cob is small. Cob = 1.0pF standard ● Due to the ultra-small size, the set can be downsized an

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5619 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain, low noise. • Can operate at low voltage. • Super mini package for easy mounting. AP

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5620 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain, low noise. • Can operate at low voltage. • Super mini package for easy mounting. A

For Low Frequency Amplify Application Sillcon Npn Epitaxial Type

[Isahaya Electronics] DESCRIPTION 2SC5620 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain, low noise. • Can operate at low voltage. • Super mini packag

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

[Isahaya Electronics] DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5621 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=4.5GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. APPLICATION

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage • High Switching Speed • Low Saturation Voltage • Wide area of safe operation • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Character display horizontal deflection output

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■ Features • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO)

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 26 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18dB typ. , NF = 1.2dB typ. at f = 1.8GHz

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure; PG = 18 dB typ., NF = 1.2 dB typ. at f = 1.8 GHz

SMALL-SIGNAL TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SC5625 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.5V max ● Super mini package for easy m

SILICON EPITAXIAL

Overview 2SC5625 Ultra-compact resin-sealed silicon NPN epitaxy Type transistor, designed and manufactured for high breakdown voltage. Widely used for downsizing of sets and high-density mounting You. Special length • Ultra-small outer shape enables miniaturization of sets and high-density moun

TRANSISTOR

[Isahaya] For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type)

TRANSISTOR

DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed silicon NPN epitaxial type transistor. It is designed for high frequency amplify application. FEATURE • Super mini package for easy mounting • High gain band width product APPLICATION Small type machine high frequency a

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V)

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • Super compact package; (1.6 × 0.8 × 0.7mm) • High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V)

Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier

Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier

Features • High gain bandwidth product fT = 11 GHz typ. • High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For high-frequency amplification and switching ■ Features • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5633 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for high voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=0.5V max ● Super mini package for easy mounting APPLICATION For Hybrid IC, DC-DC conv

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi 2SC5634 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=8.0GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. A

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi 2SC5635 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE ▪ Super mini package for easy mounting. ▪ High gain bandwidth product. fT=8.0GHz ▪ High gain,low noise. ▪ Can operate at low voltage

FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application. FEATURE • High gain bandwidth product. fT=8.0GHz • High gain,low noise. • Can operate at low voltage. • Super mini package for easy mounting. A

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.5dB typ (f=2GHz). • High cutoff frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). • Low-voltage operating . • High gain :|S21e|2 =9.5dB typ (f=2GHz).

UHF to S Band Low-Noise Amplifier andOSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.5dB typ (f=2GHz). • High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). • Low operating voltage. • High gain :S21e2=9.5dB typ (f=2GHz

UHF to S-Band Low-Noise Amplifier, OSC Applications

UHF to S-Band Low-Noise Amplifier, OSC Applications Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, sl

RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP

Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen f

RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP

Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen f

UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=2.6dB typ (f=2GHz). • High cutoff frequency : fT=9.0GHz typ (VCE=1V). : fT=11.5GHz typ (VCE=3V). • Low operating voltage. • High gain : S21e2=10.5dB typ (f=2GHz).

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=2.6dB typ (f=2GHz). • High cutoff frequency : fT=9.0GHz typ (VCE=1V). : fT=11.5GHz typ (VCE=3V). • Low operating voltage. • High gain : S21e2=10.5dB typ (f=2GHz). • Ultram

Silicon NPN epitaxial planer type(For DC-DC converter)

Silicon NPN epitaxial planer type For DC-DC converter Complementary to 2SA2028 ■ Features • Low collector to emitter saturation voltage VCE(sat) • S-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

2SC4097 / 2SC1741S

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

General purpose small signal amplifier

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

General purpose transistor (50V, 0.15A)

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

General purpose transistor (50V, 0.15A)

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.