NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM)

High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V

High-Frequency Medium-Output Amplifier Applications

High-Frequency Medium-Output Amplifier Applications Features • High fT : (fT=3.5GHz typ). • Large current : (IC=300mA). • Large allowable collector dissipation (1.3W max).

High-Frequency Medium-Output Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

High-Frequency Medium-Output Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors Silicon NPN triple diffusion mesa type For horizontal deflection output ■Features •High breakdown voltage, and high reliability through the use of a glass passivation layer •High-speed switching •Wide safe operation area

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59 mm) • Capable low voltage operation; (VCE = 1 V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59 mm) • Capable low voltage operation; (VCE = 1 V)

For UHF Band Low-Noise Amplification

Silicon NPN epitaxial planar type For UHF band low-noise amplification ■ Features • Low noise figure NF • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

High-Speed Switching Application for Inverter Lighting

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High-Speed Switching Application for Inverter Lighting

文件：152.05 Kbytes Page：5 Pages

High-Frequency Medium-Output Amplifier Applications

文件：403.15 Kbytes Page：6 Pages

High-Frequency Medium-Output Amplifier Applications

文件：403.15 Kbytes Page：6 Pages

封装/外壳：TO-243AA 包装：带 描述：RF TRANS NPN 30V 3.5GHZ PCP 分立半导体产品 晶体管 - 双极（BJT）- 射频

isc Silicon NPN Power Transistor

文件：284.45 Kbytes Page：2 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 10V 0.08A MINI3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个