2SC555晶体管资料

  • 2SC555别名:2SC555三极管、2SC555晶体管、2SC555晶体三极管

  • 2SC555生产厂家:日本东芝公司

  • 2SC555制作材料:Si-NPN

  • 2SC555性质:超高频/特高频 (UHF)_宽频带放大 (A)_TR_输出

  • 2SC555封装形式:直插封装

  • 2SC555极限工作电压:55V

  • 2SC555最大电流允许值:0.4A

  • 2SC555最大工作频率:400MHZ

  • 2SC555引脚数:3

  • 2SC555最大耗散功率:1W

  • 2SC555放大倍数

  • 2SC555图片代号:C-40

  • 2SC555vtest:55

  • 2SC555htest:400000000

  • 2SC555atest:0.4

  • 2SC555wtest:1.0001

  • 2SC555代换 2SC555用什么型号代替:BFR36,BFR97,BFW16,BFW17,BLW11,3DA105B,

2SC555价格

参考价格:¥2.6268

型号:2SC5551AE-TD-E 品牌:ON 备注:这里有2SC555多少钱,2025年最近7天走势,今日出价,今日竞价,2SC555批发/采购报价,2SC555行情走势销售排行榜,2SC555报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNTRIPLEDIFFUSEDTYPE(HIGHSPEEDSWITCHINGAPPLICATIONFORINVERTERLIGHTINGSYSTEM)

High-SpeedSwitchingApplicationforInverterLightingSystem •SuitableforRCCcircuit(guaranteedsmallcurrenthFE) :hFE=13(min)(IC=1mA) •Highspeed:tr=0.5µs(max),tf=0.3µs(max)(IC=0.24A) •Highbreakdownvoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-FrequencyMedium-OutputAmplifierApplications

High-FrequencyMedium-OutputAmplifierApplications Features •HighfT:(fT=3.5GHztyp). •Largecurrent:(IC=300mA). •Largeallowablecollectordissipation(1.3Wmax).

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-FrequencyMedium-OutputAmplifierApplications

NPNEpitaxialPlanarSiliconTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

RFTransistor

Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RFTransistor

Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RFTransistor

Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High-FrequencyMedium-OutputAmplifierApplications

NPNEpitaxialPlanarSiliconTransistor Features •HighfT:(fT=3.5GHztyp) •Largecurrent:(IC=300mA) •Largeallowablecollectordissipation(1.3Wmax)

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

PowerTransistors SiliconNPNtriplediffusionmesatype Forhorizontaldeflectionoutput ■Features •Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer •High-speedswitching •Widesafeoperationarea

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

■Overview Basedonaccumulatedmanufacturingtechnology,thesehorizontaldeflectiontransistorsforTVsofferhighperformanceandcompactdesign.Theycanalsowithstandhighvoltageandmaintainlowloss.Theyalsohaveabroadareaofsafeoperation,despiteanabsolutelyminimalchipareaw

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

HorizontalDeflectionTransistorSeriesforTV

■Overview Basedonaccumulatedmanufacturingtechnology,thesehorizontaldeflectiontransistorsforTVsofferhighperformanceandcompactdesign.Theycanalsowithstandhighvoltageandmaintainlowloss.Theyalsohaveabroadareaofsafeoperation,despiteanabsolutelyminimalchipareaw

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage; (1.4×0.8×0.59mm) •Capablelowvoltageoperation; (VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage; (1.4×0.8×0.59mm) •Capablelowvoltageoperation; (VCE=1V)

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage; (1.4×0.8×0.59mm) •Capablelowvoltageoperation; (VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

ForUHFBandLow-NoiseAmplification

SiliconNPNepitaxialplanartype ForUHFbandlow-noiseamplification ■Features •LownoisefigureNF •HightransitionfrequencyfT •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

High-SpeedSwitchingApplicationforInverterLighting

文件:152.05 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-SpeedSwitchingApplicationforInverterLighting

文件:152.05 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-FrequencyMedium-OutputAmplifierApplications

文件:403.15 Kbytes Page:6 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

High-FrequencyMedium-OutputAmplifierApplications

文件:403.15 Kbytes Page:6 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

封装/外壳:TO-243AA 包装:带 描述:RF TRANS NPN 30V 3.5GHZ PCP 分立半导体产品 晶体管 - 双极(BJT)- 射频

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscSiliconNPNPowerTransistor

文件:284.45 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 10V 0.08A MINI3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PanasonicElectronicComponents

Panasonic Electronic Components

PanasonicElectronicComponents

2SC555产品属性

  • 类型

    描述

  • 型号

    2SC555

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    Trans GP BJT NPN 400V 1A 3-Pin TO-126IS

更新时间:2025-7-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
24+
NA/
10500
优势代理渠道,原装正品,可全系列订货开增值税票
PANASONIC/松下
20+
TO-3PF
38900
原装优势主营型号-可开原型号增税票
RENESAS
01+
SOT-523
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SOT-723
23+
NA
15659
振宏微专业只做正品,假一罚百!
HITACHI
6000
面议
19
SOT343
PAN
24+
TO-3P
3952
HITACHI/日立
23+
393000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
PANASONIC/松下
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
HIT
2023+
SOT923
8700
原装现货
PANASONIC/松下
2023+
TO3P
2000
一级代理优势现货,全新正品直营店

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