RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

High-Frequency Medium-Output Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

RF Transistor, NPN Single, 30 V, 300 mA, fT = 3.5 GHz

2SC5551A is RF Transistor, 30 V, 300 mA, fT = 3.5 GHz, NPN Single PCP for High-Frequency Medium-Output Amplifier Applications. • High fT : (fT=3.5GHz typ)\n• Large current : (IC=300mA)\n• Large allowable collector dissipation (1.3W max);

High-Frequency Medium-Output Amplifier Applications

文件：403.15 Kbytes Page：6 Pages

RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

High-Frequency Medium-Output Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

High-Frequency Medium-Output Amplifier Applications

文件：403.15 Kbytes Page：6 Pages

封装/外壳：TO-243AA 包装：带 描述：RF TRANS NPN 30V 3.5GHZ PCP 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：TO-243AA 包装：带 描述：RF TRANS NPN 30V 3.5GHZ PCP 分立半导体产品 晶体管 - 双极（BJT）- 射频

High-Frequency Medium-Output Amplifier Applications

High-Frequency Medium-Output Amplifier Applications Features • High fT : (fT=3.5GHz typ). • Large current : (IC=300mA). • Large allowable collector dissipation (1.3W max).