Silicon NPN Triple Diffused Horizntal Deflection Output

Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output stage applications.

TRANSISTOR

For Low Frequency Power Amplify Application DESCRIPTION 2SC5482 is a silicon NPN epitaxial designed for relay drive or power supply application.

FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO

[Isahaya] For Low Frequency Power Amplify Application DESCRIPTION 2SC5482 is a silicon NPN epitaxial designed for relay drive or power supply application.

SILICON NPN TRANSISTOR

SILICON NPN TRANSISTOR

TRANSISTOR

DESCRIPTION Mitsubishi 2SC5485 is a silicon NPN epitaxial type transisor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO

[Isahaya Electronics Corporation] DESCRIPTION Mitsubishi 2SC5485 is a silicon NPN epitaxial type transisor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

TRANSISTOR

DESCRIPTION 2SC5486 is a silicon NPN epitaxial Transistor. It designed with high collector current and high collector dissipation. APPLICATION For storobe, DC/DC converter, power amplify application

VHF to UHF Low-Noise Wide-Band Amplifier Applications

VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : S21e2=12dB typ (f=1GHz). • High cutoff frequency : fT=7GHz typ. • Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm)

VHF to UHF Wide-Band Low-Noise Amplifier Applications

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance

NPN Single SSFP RF Transistor

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance

NPN Single SSFP RF Transistor

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance

VHF to UHF Low-Noise Wide-Band Amplifier Applications

VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.2dB typ (f=1GHz). • High gain : |S21e|2=13dB typ (f=1GHz). • High cutoff frequency : fT=9.0GHz typ. • Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro

文件：259.29 Kbytes Page：4 Pages

For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro

文件：259.29 Kbytes Page：4 Pages

晶体管（PNP、NPN）

晶体管（PNP、NPN）

600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE.

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件：468.91 Kbytes Page：7 Pages

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件：468.91 Kbytes Page：7 Pages

封装/外壳：SC-81 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 10V 7GHZ 3SSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SOT-623F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 10V 0.07A 3SSFP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个