封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 400V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications • High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min) (IC = 0.3 A)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 13(Min)@ IC= 1mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

Silicon NPN Triple Diffused Type

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