Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

NPN EPITAXIAL SILICON TRANSISTOR

FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

NPN EPITAXIAL SILICON TRANSISTOR

FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

Silicon NPN triple diffusion planar type

Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, DC-AC INVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 μs (max) tf = 0.3 μs (max) (IC = 0.4 A) • High collector breakdown voltage: VCEO =

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications • High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min) (IC = 0.3 A)

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 13(Min)@ IC= 1mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

isc Silicon NPN Power Transistor

文件：246.73 Kbytes Page：2 Pages

High Speed Switching

文件：129.259 Kbytes Page：2 Pages

Horizontal Deflection Switching Transistors

Horizontal Deflection Switching Transistors

Horizontal Deflection Switching Transistors

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

文件：188.86 Kbytes Page：14 Pages

封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 6V 14.5GHZ SOT143 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

文件：189.36 Kbytes Page：14 Pages

封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 6V 12GHZ SOT143 分立半导体产品 晶体管 - 双极（BJT）- 射频

High Voltage Switching Applications

文件：202.83 Kbytes Page：5 Pages

High Voltage Switching Applications

文件：202.83 Kbytes Page：5 Pages

Silicon NPN Triple Diffused Type

文件：141.86 Kbytes Page：4 Pages

Silicon NPN Triple Diffused Type

文件：141.86 Kbytes Page：4 Pages