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2SC543晶体管资料
2SC543别名：2SC543三极管、2SC543晶体管、2SC543晶体三极管
2SC543生产厂家：日本富士通公司
2SC543制作材料：Si-NPN
2SC543性质：甚高频 （VHF）_功率放大 （L）
2SC543封装形式：特殊封装
2SC543极限工作电压：65V
2SC543最大电流允许值：3A
2SC543最大工作频率：175MHZ
2SC543引脚数：3
2SC543最大耗散功率：14.5W
2SC543放大倍数：
2SC543图片代号：F-28
2SC543vtest：65
2SC543htest：175000000
- 2SC543atest：3
2SC543wtest：14.5
2SC543代换 2SC543用什么型号代替：BLY35,BLY60,2N3632,3DA23B,40307,40665,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5004 | NEC 瑞萨 |   | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5004 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5006 | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5007 | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5007 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5007 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5008 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 1.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5008 | NEC 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5008 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package | NEC 瑞萨 | | ||
NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., S21e2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz | RENESAS 瑞萨 | | ||
NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Low phase di | RENESAS 瑞萨 | | ||
NPN SILICON SiGe RF TWIN TRANSISTOR NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5435, NESG2107M33) Q1: High gain transistor fT = 12.0 GHz TYP., S21e2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in l | RENESAS 瑞萨 | | ||
NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Bui | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5186 | NEC 瑞萨 | | ||
NPN SILICON SiGe RF TWIN TRANSISTOR NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor fT = 12 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in lo | RENESAS 瑞萨 | | ||
NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase di | RENESAS 瑞萨 | | ||
NPN SILICON RF TWIN TRANSISTOR NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Bui | RENESAS 瑞萨 | | ||
NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5195 | NEC 瑞萨 | | ||
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTA SWITCHINGM DC-DC CONVERTER, INVERTER LIGHTING APPLICATIONS) Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications • Excellent switching times: tr = 0.2 μs (typ.), tf = 0.15 μs (typ.) • High collector breakdown voltage: VCEO = 450 V | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High collector breakdown voltage • Excellent switching times APPLICATIONS • Switching regulator applications • High voltage switching applications • DC-DC converter applications • Inverter lighting applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High collector breakdown voltage • Excellent switching times APPLICATIONS • Switching regulator applications • High voltage switching applications • DC-DC converter applications • Inverter lighting applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High collector breakdown voltage • Excellent switching times APPLICATIONS • Switching regulator applications • High voltage switching applications • DC-DC converter applications • Inverter lighting applications | SAVANTIC | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION | RENESAS 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION | RENESAS 瑞萨 | | ||
NPN SILICON TRANSISTOR 文件：43.7 Kbytes Page：3 Pages | CEL | | ||
Silicon NPN Power Transistors 文件：206.83 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Triple Diffused Type Switching Regulator Applications 文件：140.95 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors 文件：266.84 Kbytes Page：4 Pages | SAVANTIC | | ||
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 450V 8A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Silicon NPN Triple Diffused Type Switching Regulator Applications 文件：140.95 Kbytes Page：4 Pages | TOSHIBA 东芝 | | ||
Silicon NPN Power Transistors 文件：206.83 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：206.83 Kbytes Page：4 Pages | JMNIC 锦美电子 | |
2SC543产品属性
- 类型
描述
- 型号
2SC543
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2511 |
SOT423 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
23+ |
699999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
NEC |
1922+ |
SOT-523 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NEC |
23+ |
SOT-423 |
50000 |
全新原装正品现货,支持订货 |
|||
SANYO |
24+ |
60000 |
|||||
RENESAS/瑞萨 |
25+ |
SOT523 |
15000 |
全新原装现货,价格优势 |
|||
NEC |
2023+ |
SOT-423 |
50000 |
原装现货 |
|||
NEC |
25+ |
SOT363 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
RENESAS/瑞萨 |
22+ |
SOT-523 |
20000 |
只做原装 |
|||
NEC |
16+ |
SOT-323 |
10000 |
进口原装现货/价格优势! |
2SC543芯片相关品牌
2SC543规格书下载地址
2SC543参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SC550
- 2SC55
- 2SC549
- 2SC548
- 2SC5474
- 2SC5473
- 2SC5472
- 2SC547
- 2SC5460
- 2SC546
- 2SC5459
- 2SC5458
- 2SC5457
- 2SC5453
- 2SC5452
- 2SC5451
- 2SC5450
- 2SC545
- 2SC5449
- 2SC5448
- 2SC5447
- 2SC5446
- 2SC5445
- 2SC5444
- 2SC5443
- 2SC5442
- 2SC5441
- 2SC5440
- 2SC544
- 2SC5439
- 2SC5437
- 2SC5436
- 2SC5435
- 2SC5434
- 2SC5433
- 2SC5432
- 2SC5431
- 2SC5428
- 2SC5423
- 2SC5422
- 2SC5421
- 2SC5420
- 2SC542
- 2SC5419
- 2SC5418
- 2SC5417LS
- 2SC5417
- 2SC5416LS
- 2SC5416
- 2SC5415
- 2SC5414
- 2SC5413
- 2SC5412
- 2SC5411
- 2SC5410
- 2SC541
- 2SC5409
- 2SC5408
- 2SC5407
- 2SC5406
- 2SC5405
- 2SC5404
- 2SC5398
- 2SC5397
2SC543数据表相关新闻
2SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5353BL-TO126CK-TG
2SC5353BL-TO126CK-TG
2023-1-302SC5015-T1
https://hch01.114ic.com/
2020-11-132SC5299
2SC5299，全新原装当天发货或门市自取0755-82732291.
2020-4-242SC5826中文资料库
2SC5826中文资料库
2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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